MT18VDDF12872G-335D3 Micron Technology Inc, MT18VDDF12872G-335D3 Datasheet - Page 16

• Manufacturer Part Number: MT18VDDF12872G-335D3
• Description: MODULE DDR SDRAM 1GB 184-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT18VDDF12872G-335D3

• Memory Type: DDR SDRAM
• Memory Size: 1GB
• Speed: 167MHz
• Package / Case: 184-DIMM
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 557-1113

Table 13: IDD Specifications and Conditions – 1GB
DDR SDRAM components only
Notes: 1–5, 8, 10, 12, 48; notes appear on pages 21–24; 0°C
pdf: 09005aef8074e85b, source: 09005aef8072fe49
DDF18C64_128x72G.fm - Rev. C 11/04 EN
PARAMETER/CONDITION
OPERATING CURRENT: One device bank; Active-Precharge;
t
changing once per clock cyle; Address and control inputs
changing once every two clock cycles
OPERATING CURRENT: One device bank; Active -Read
Precharge; Burst = 4;
I
clock cycle
PRECHARGE POWER-DOWN STANDBY CURRENT: All device
banks idle; Power-down mode;
IDLE STANDBY CURRENT: CS# = HIGH; All device banks idle;
t
inputs changing once per clock cycle. V
DQS, and DM
ACTIVE POWER-DOWN STANDBY CURRENT: One device
bank active; Power-down mode;
ACTIVE STANDBY CURRENT: CS# = HIGH; CKE = HIGH; One
device bank; Active-Precharge;
t
per clock cycle; Address and other control inputs changing
once per clock cycle
OPERATING CURRENT: Burst = 2; Reads; Continuous burst;
One bank active; Address and control inputs changing once
per clock cycle;
OPERATING CURRENT: Burst = 2; Writes; Continuous burst;
One device bank active; Address and control inputs
changing once per clock cycle;
and DQS inputs changing twice per clock cycle
AUTO REFRESH CURRENT
SELF REFRESH CURRENT: CKE
OPERATING CURRENT: Four device bank interleaving READs
(BL = 4) with auto precharge,
(MIN); Address and control inputs change only during
Active READ, or WRITE commands
RC =
OUT
CK =
CK =
= 0mA; Address and control inputs changing once per
t
t
t
RC (MIN);
CK MIN; CKE = HIGH; Address and other control
CK (MIN); DQ, DM, and DQS inputs changing twice
t
CK =
t
CK =
t
t
RC =
CK (MIN); I
t
CK (MIN); DQ, DM and DQS inputs
t
RC (MIN);
t
RC =
t
t
0.2V
t
CK =
CK =
RC =
t
CK =
OUT
t
RC (MIN);
t
t
= 0mA
CK (MIN); CKE = (LOW)
t
CK (MIN); DQ, DM,
t
RAS (MAX);
t
CK =
CK (MIN); CKE = LOW
IN
t
t
REFC =
REFC = 7.8125µs
= V
t
CK (MIN);
REF
t
CK =
t
for DQ,
RFC (MIN)
t
CK
16
T
SYMBOL
A
I
I
I
I
I
I
I
DD4W
I
I
I
DD3N
DD5A
I
I
DD2P
DD3P
DD4R
DD2F
DD
DD
DD1
DD6
DD7
+70°C; V
0
5
Micron Technology, Inc., reserves the right to change products or specifications without notice.
184-PIN DDR SDRAM RDIMM
DD
2,340
2,880
2,970
3,150
5,220
7,290
512MB, 1GB (x72, ECC, SR)
-335
810
630
900
180
90
90
= V
DD
Q = +2.5V ±0.2V
MAX
2,340
2,880
2,970
2,790
5,220
7,200
-262
810
630
900
180
90
90
©2004 Micron Technology, Inc. All rights reserved.
-26A/
2,070
2,610
2,610
2,430
5,040
6,300
-265/
-202
720
540
810
180
90
90
UNITS
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
NOTES
21, 28,
21, 28,
20, 43
20, 43
20, 43
20, 45
24, 45
20, 44
45
46
45
42
20
9