MT16HTF12864AY-53EB1 Micron Technology Inc, MT16HTF12864AY-53EB1 Datasheet

MODULE DDR2 1GB 240-DIMM

MT16HTF12864AY-53EB1

Manufacturer Part Number
MT16HTF12864AY-53EB1
Description
MODULE DDR2 1GB 240-DIMM
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT16HTF12864AY-53EB1

Memory Type
DDR2 SDRAM
Memory Size
1GB
Speed
533MT/s
Package / Case
240-DIMM
Main Category
DRAM Module
Sub-category
DDR2 SDRAM
Module Type
240UDIMM
Device Core Size
64b
Organization
128Mx64
Total Density
1GByte
Chip Density
512Mb
Access Time (max)
50ps
Maximum Clock Rate
533MHz
Operating Supply Voltage (typ)
1.8V
Operating Current
1.216A
Number Of Elements
16
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
240
Mounting
Socket
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
DDR2 SDRAM UDIMM
MT16HTF6464AY – 512MB
MT16HTF12864AY – 1GB
MT16HTF25664AY – 2GB
MT16HTF51264AY – 4GB
Features
• 240-pin, unbuffered dual in-line memory module
• Fast data transfer rates: PC2-8500, PC2-6400,
• 512MB (64 Meg x 64), 1GB (128 Meg x 64),
• V
• V
• JEDEC-standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• 4n-bit prefetch architecture
• Multiple internal device banks for concurrent
• Programmable CAS latency (CL)
• Posted CAS additive latency (AL)
• WRITE latency = READ latency - 1
• Programmable burst lengths (BL): 4 or 8
• Adjustable data-output drive strength
• 64ms, 8192-cycle refresh
• On-die termination (ODT)
• Serial presence detect (SPD) with EEPROM
• Gold edge contacts
• Dual rank
Table 1: Key Timing Parameters
PDF: 09005aef80f09084
htf16c64_128_256x64ay.pdf - Rev. G 3/10 EN
PC2-5300, PC2-4200, or PC2-3200
2GB (256 Meg x 64), 4GB (512 Meg x 64)
operation
Speed
Grade
-1GA
-80E
-800
-667
-53E
-40E
DD
DDSPD
= V
DDQ
= 1.7–3.6V
Nomenclature
1.8V
Products and specifications discussed herein are subject to change by Micron without notice.
Industry
PC2-8500
PC2-6400
PC2-6400
PC2-5300
PC2-4200
PC2-3200
CL = 7
1066
t
CK
512MB, 1GB, 2GB, 4GB (x64, DR) 240-Pin DDR2 UDIMM
CL = 6
800
800
800
Data Rate (MT/s)
CL = 5
667
800
667
667
1
Figure 1: 240-Pin UDIMM (MO-237 R/C B and E)
Module height: 30.0mm (1.18in)
Options
• Operating temperature
• Package
• Frequency/CL
Notes:
– Commercial (0°C ≤ T
– Industrial (–40°C ≤ T
– 240-pin DIMM (lead-free)
– 1.875ns @ CL = 7 (DDR2-1066)
– 2.5ns @ CL = 5 (DDR2-800)
– 2.5ns @ CL = 6 (DDR2-800)
– 3ns @ CL = 5 (DDR2-667)
– 3.75ns @ CL = 4 (DDR2-533
– 5.0ns @ CL = 3 (DDR2-400)
CL = 4
Micron Technology, Inc. reserves the right to change products or specifications without notice.
533
533
533
553
553
400
1. Contact Micron for industrial temperature
2. CL = CAS (READ) latency.
3. Available only in 2GB, Rev. E devices.
4. Not available in 512MB, 4GB module density.
5. Not recommended for new designs.
module offerings.
CL = 3
400
400
400
400
400
400
2
A
13.125
A
t
(ns)
12.5
RCD
≤ +85°C)
≤ +70°C)
15
15
15
15
© 2003 Micron Technology, Inc. All rights reserved.
4
4
5
5
3
1
13.125
(ns)
12.5
t
15
15
15
15
RP
Features
Marking
None
-1GA
-80E
-53E
-40E
-800
-667
58.125
(ns)
57.5
t
Y
I
60
60
55
55
RC

Related parts for MT16HTF12864AY-53EB1

MT16HTF12864AY-53EB1 Summary of contents

Page 1

... DDR2 SDRAM UDIMM MT16HTF6464AY – 512MB MT16HTF12864AY – 1GB MT16HTF25664AY – 2GB MT16HTF51264AY – 4GB Features • 240-pin, unbuffered dual in-line memory module • Fast data transfer rates: PC2-8500, PC2-6400, PC2-5300, PC2-4200, or PC2-3200 • 512MB (64 Meg x 64), 1GB (128 Meg x 64), 2GB (256 Meg x 64), 4GB (512 Meg x 64) • ...

Page 2

... Table 2: Addressing Parameter Refresh count Row address Device bank address Device configuration Column address Module rank address Table 3: Part Numbers and Timing Parameters – 512MB Modules (End of Life) 1 Base device: MT47H32M8, 256Mb DDR2 SDRAM Module 2 Part Number Density MT16HTF6464A(I)Y-667__ MT16HTF6464A(I)Y-53E__ MT16HTF6464A(I)Y-40E__ Table 4: Part Numbers and Timing Parameters – ...

Page 3

... Base device: MT47H128M8, 1Gb DDR2 SDRAM Module 2 Part Number Density MT16HTF25664A(I)Y-80E__ MT16HTF25664A(I)Y-800__ MT16HTF25664A(I)Y-667__ MT16HTF25664A(I)Y-53E__ MT16HTF25664A(I)Y-40E__ Table 6: Part Numbers and Timing Parameters – 4GB Modules 1 Base device: MT47H256M8, 2Gb DDR2 SDRAM Module 2 Part Number Density MT16HTF51264A(I)Y-667__ MT16HTF51264A(I)Y-53E__ Notes: 1. The data sheet for the base device can be found on Micron’s Web site. ...

Page 4

Pin Assignments Table 7: Pin Assignments 240-Pin UDIMM Front Pin Symbol Pin Symbol Pin DQ19 61 REF DQ0 33 DQ24 63 4 DQ1 34 DQ25 ...

Page 5

... Pin Descriptions The pin description table below is a comprehensive list of all possible pins for all DDR2 modules. All pins listed may not be supported on this module. See Pin Assignments for information specific to this module. Table 8: Pin Descriptions Symbol Type Ax Input BAx Input ...

Page 6

Table 8: Pin Descriptions (Continued) Symbol Type SDA I/O RDQSx, Output RDQS#x Err_Out# Output (open drain Supply DD DDQ V Supply DDSPD V Supply REF V Supply SS – NC – NF – NU – RFU PDF: 09005aef80f09084 ...

Page 7

Functional Block Diagram Figure 2: Functional Block Diagram (-1GA, -80E, -800, -667, -53E, -40E) – Raw Card E S1# S0 DQS0 DQS0 DM0 DM DQ0 DQ DQ1 DQ DQ2 DQ DQ3 DQ DQ4 DQ DQ5 DQ ...

Page 8

Figure 3: Functional Block Diagram (-53E, -40E) – Raw Card B S1# S0 DQS0 DQS0 DM0 DM DQ0 DQ DQ1 DQ DQ2 DQ DQ3 DQ DQ4 DQ DQ5 DQ DQ6 DQ DQ7 DQ DQS1# DQS1 DM1 ...

Page 9

... DRAM core and eight corresponding n-bit-wide, one-half-clock-cycle data trans- fers at the I/O pins. DDR2 modules use two sets of differential signals: DQS, DQS# to capture data and CK and CK# to capture commands, addresses, and control signals. Differential clocks and data strobes ensure exceptional noise immunity for these signals and provide precise crossing points to capture input signals ...

Page 10

Electrical Specifications Stresses greater than those listed may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other condi- tions outside those indicated in the device data ...

Page 11

... Design Considerations Simulations Micron memory modules are designed to optimize signal integrity through carefully de- signed terminations, controlled board impedances, routing topologies, trace length matching, and decoupling. However, good signal integrity starts at the system level. Mi- cron encourages designers to simulate the signal characteristics of the system's memo- ry bus to ensure adequate signal integrity of the entire memory system ...

Page 12

I Specifications DD Table 11: DDR2 I Specifications and Conditions – 512MB DD Values shown for MT47H32M8 DDR2 SDRAM only and are computed from values specified in the 256Mb (32 Meg x 8) component data sheet Parameter Operating one bank ...

Page 13

Table 11: DDR2 I Specifications and Conditions – 512MB (Continued) DD Values shown for MT47H32M8 DDR2 SDRAM only and are computed from values specified in the 256Mb (32 Meg x 8) component data sheet Parameter Operating bank interleave read current: ...

Page 14

Table 12: DDR2 I Specifications and Conditions – 1GB DD Values shown for MT47H64M8 DDR2 SDRAM only and are computed from values specified in the 512Mb (64 Meg x 8) component data sheet Parameter Operating one bank active-precharge current: t ...

Page 15

Table 12: DDR2 I Specifications and Conditions – 1GB (Continued) DD Values shown for MT47H64M8 DDR2 SDRAM only and are computed from values specified in the 512Mb (64 Meg x 8) component data sheet Parameter Operating bank interleave read current: ...

Page 16

Table 13: DDR2 I Specifications and Conditions (Die Revision A) – 2GB DD Values shown for MT47H128M8 DDR2 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) com- ponent data sheet Parameter Operating one ...

Page 17

Table 13: DDR2 I Specifications and Conditions (Die Revision A) – 2GB (Continued) DD Values shown for MT47H128M8 DDR2 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) com- ponent data sheet Parameter Operating ...

Page 18

Table 14: DDR2 I Specifications and Conditions (Die Revision E) – 2GB DD Values shown for MT47H128M8 DDR2 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) com- ponent data sheet Parameter Operating one ...

Page 19

Table 14: DDR2 I Specifications and Conditions (Die Revision E) – 2GB (Continued) DD Values shown for MT47H128M8 DDR2 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) com- ponent data sheet Parameter Operating ...

Page 20

Table 15: DDR2 I Specifications and Conditions – 4GB DD Values shown for MT47H256M8 DDR2 SDRAM only and are computed from values specified in the 2Gb (256 Meg x 8) com- ponent data sheet Parameter Operating one bank active-precharge current: ...

Page 21

Table 15: DDR2 I Specifications and Conditions – 4GB (Continued) DD Values shown for MT47H256M8 DDR2 SDRAM only and are computed from values specified in the 2Gb (256 Meg x 8) com- ponent data sheet Parameter Operating bank interleave read ...

Page 22

Serial Presence-Detect For the latest SPD data, refer to Micron's SPD page: www.micron.com/SPD. Table 16: SPD EEPROM Operating Conditions Parameter/Condition Supply voltage Input high voltage: logic 1; All inputs Input low voltage: logic 0; All inputs Output low voltage: I ...

Page 23

Module Dimensions Figure 4: 240-Pin DDR2 UDIMM (-1GA, -80E, -800, -667, -53E, -40E) – Raw Card E 2.0 (0.079) R (4X 2.5 (0.098) D (2X) 2.3 (0.091) TYP Pin 1 2.2 (0.087) TYP 1.0 (0.039) TYP 1.0 (0.039) ...

Page 24

Figure 5: 240-Pin DDR2 UDIMM (-53E, -40E) – Raw Card B 2.0 (0.079) R (4X 2.5 (0.098) D (2X) 2.3 (0.091) TYP Pin 1 2.2 (0.087) TYP 1.0 (0.039) TYP 1.0 (0.039) TYP 70.68 (2.78) U11 U12 3.05 ...

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