MT8VDDT6464HG-335F2 Micron Technology Inc, MT8VDDT6464HG-335F2 Datasheet

MODULE DDR SDRAM 512MB 200SODIMM

MT8VDDT6464HG-335F2

Manufacturer Part Number
MT8VDDT6464HG-335F2
Description
MODULE DDR SDRAM 512MB 200SODIMM
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT8VDDT6464HG-335F2

Memory Type
DDR SDRAM
Memory Size
512MB
Speed
333MT/s
Package / Case
200-SODIMM
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Features
• 200-pin, small-outline dual in-line memory module
• Fast data transfer rates: PC2100, PC2700, or PC3200
• 256MB (32 Meg x 64), 512MB (64 Meg x 64)
• V
• V
• 2.5V I/O (SSTL_2-compatible)
• Internal, pipelined double data rate (DDR)
• Bidirectional data strobe (DQS) transmitted/
• Differential clock inputs (CK and CK#)
• Multiple internal device banks for concurrent
• Selectable burst lengths (BL): 2, 4, or 8
• Auto precharge option
• Auto refresh and self refresh modes: 7.8125µs
• Serial presence-detect (SPD) with EEPROM
• Selectable CAS latency (CL) for maximum
• Single rank
• Gold edge contacts
Table 1:
DDR SDRAM SODIMM
MT8VDDT3264H – 256MB
MT8VDDT6464H – 512MB
For component data sheets, refer to Micron’s Web site:
PDF: 09005aef8092973f / Source: 09005aef80921669
DD8C32_64x64H.fm - Rev. D 9/08 EN
(SODIMM)
(-40B: V
architecture; two data accesses per clock cycle
received with data—that is, source-synchronous
data capture
operation
maximum average periodic refresh interval
compatibility
DD
DDSPD
Speed
Grade
-26A
-40B
-335
-262
-265
= V
DD
DD
= +2.3V to +3.6V
Q = +2.5V
= V
Key Timing Parameters
Products and specifications discussed herein are subject to change by Micron without notice.
DD
Nomenclature
Notes:
Q = +2.6V)
Industry
PC3200
PC2700
PC2100
PC2100
PC2100
1. The values of
actual DDR SDRAM device specifications are 15ns.
CL = 3
1
400
t
RCD and
256MB, 512MB (x64, SR) 200-Pin DDR SDRAM SODIMM
Data Rate (MT/s)
CL = 2.5
t
www.micron.com
RP for -335 modules show 18ns to align with industry specifications;
333
333
266
266
266
1
Figure 1:
Options
• Operating temperature
• Package
• Memory clock, speed, CAS latency
– Commercial (0°C ≤ T
– Industrial (–40°C ≤ T
– 200-pin DIMM (standard)
– 200-pin DIMM (Pb-free)
– 5.0ns (200 MHz), 400 MT/s, CL = 3
– 6.0ns (167 MHz), 333 MT/s, CL = 2.5
– 7.5ns (133 MHz), 266 MT/s, CL = 2
– 7.5ns (133 MHz), 266 MT/s, CL = 2
– 7.5ns (133 MHz), 266 MT/s, CL = 2.5
CL = 2
266
266
266
266
200
PCB height: 31.75mm (1.25in)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1. Not recommended for new designs.
2. Contact Micron for industrial temperature
module offerings.
200-Pin SODIMM (MO-224)
t
(ns)
RCD
15
18
15
20
20
A
A
2
≤ +85°C)
≤ +70°C)
(ns)
t
15
18
15
20
20
RP
©2004 Micron Technology, Inc. All rights reserved.
(ns)
1
1
t
55
60
60
65
65
RC
1
Marking
Features
None
-40B
-26A
-335
-262
-265
Notes
G
Y
I
1

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MT8VDDT6464HG-335F2 Summary of contents

Page 1

... RCD and RP for -335 modules show 18ns to align with industry specifications; Micron Technology, Inc., reserves the right to change products or specifications without notice. 1 Features 200-Pin SODIMM (MO-224) Marking 2 ≤ +70°C) None A ≤ +85°C) ...

Page 2

... MT8VDDT6464HY-40B__ MT8VDDT6464HG-335__ 512MB MT8VDDT6464HY-335__ 512MB 512MB MT8VDDT6464HG-265__ 512MB MT8VDDT6464HY-265__ Notes: 1. Data sheets for the base devices can be found on Micron’s Web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. Example: MT8VDDT6464HY-335F3. ...

Page 3

Pin Assignments and Descriptions Table 5: Pin Assignments 200-Pin SODIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol 101 REF DQ19 103 SS 5 DQ0 55 DQ24 105 7 DQ1 57 ...

Page 4

Table 6: Pin Descriptions Symbol A0–A12 BA0, BA1 CK0, CK0#, CK1, CK1# CKE0 DM0–DM7 RAS#, CAS#, WE# S0# SA0–SA2 SCL DQ0–DQ63 DQS0–DQS7 SDA DDSPD V REF PDF: 09005aef8092973f / Source: 09005aef80921669 DD8C32_64x64H.fm - Rev. ...

Page 5

Functional Block Diagrams Figure 2: Functional Block Diagram – Layout 1 (256MB) S0# DQS0 DM0 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQS2 DM2 DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 DQS4 DM4 DQ32 DQ33 DQ34 DQ35 DQ36 ...

Page 6

Figure 3: Functional Block Diagram – Layout 2 (256MB, 512MB) S0# DQS0 DM0 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQS2 DM2 DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 DQS4 DM4 DQ32 DQ33 DQ34 DQ35 DQ36 DQ37 DQ38 ...

Page 7

... READs and by the memory controller during WRITEs. DQS is edge-aligned with data for READs and center-aligned with data for WRITEs. DDR SDRAM modules operate from differential clock inputs (CK and CK#); the crossing of CK going HIGH and CK# going LOW will be referred to as the positive edge of CK. ...

Page 8

Electrical Specifications Stresses greater than those listed in Table 7 may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other conditions outside those indicated on the ...

Page 9

... Design Considerations Simulations Micron memory modules are designed to optimize signal integrity through carefully designed terminations, controlled board impedances, routing topologies, trace length matching, and decoupling. However, good signal integrity starts at the system level. Micron encourages designers to simulate the signal characteristics of the system’s memory bus to ensure adequate signal integrity of the entire memory system ...

Page 10

I Specifications DD Table 9: I Specifications and Conditions – 256MB (Die Revision K) DD Values are for the MT46V32M8 DDR SDRAM only and are computed from values specified in the 256Mb (32 Meg x 8) component data sheet Parameter/Condition ...

Page 11

Table 10: I Specifications and Conditions – 256MB (All Other Die Revisions) DD Values are for the MT46V32M8 DDR SDRAM only and are computed from values specified in the 256Mb (32 Meg x 8) component data sheet Parameter/Condition Operating one ...

Page 12

Table 11: I Specifications and Conditions – 512MB DD Values are shown for the MT46V64M8 DDR SDRAM only and are computed from values specified in the 512Mb (64 Meg x 8) component data sheet Parameter/Condition Operating one bank active-precharge current: ...

Page 13

Serial Presence-Detect Table 12: Serial Presence-Detect EEPROM DC Operating Conditions Parameter/Condition Supply voltage Input high voltage: Logic 1; All inputs Input low voltage: Logic 0; All inputs Output low voltage 3mA OUT Input leakage current GND ...

Page 14

Module Dimensions Figure 4: 200-Pin SODIMM – Layout 1 (256MB) 2.0 (0.079) R (2X) U1 1.8 (0.071) (2X) 6.0 (0.236) TYP Pin 1 1.0 (0.039) 2.0 (0.079) TYP U8 Pin 200 Notes: 1. All dimensions are in millimeters (inches); MAX/MIN ...

Page 15

Figure 5: 200-Pin SODIMM – Layout 2 (256MB, 512MB) 2.0 (0.079) R (2X) U1 1.8 (0.071) (2X) 6.0 (0.236) TYP Pin 1 1.0 (0.039) 2.0 (0.079) TYP U5 Pin 200 Notes: 1. All dimensions are in millimeters (inches); MAX/MIN or ...

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