MT18VDDF12872G-335F1 Micron Technology Inc, MT18VDDF12872G-335F1 Datasheet - Page 18

• Manufacturer Part Number: MT18VDDF12872G-335F1
• Description: MODULE DDR SDRAM 1GB 184-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT18VDDF12872G-335F1

• Memory Type: DDR SDRAM
• Memory Size: 1GB
• Speed: 333MT/s
• Package / Case: 184-DIMM
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Table 15: DDR SDRAM Component Electrical Characteristics and Recommended AC
Notes: 1–5, 12-15, 29, 49; notes appear on pages 21–24; 0°C
pdf: 09005aef8074e85b, source: 09005aef8072fe49
DDF18C64_128x72G.fm - Rev. C 11/04 EN
AC CHARACTERISTICS
PARAMETER
DQS read preamble
DQS read postamble
ACTIVE bank a to ACTIVE bank b command
DQS write preamble
DQS write preamble setup time
DQS write postamble
Write recovery time
Internal WRITE to READ command delay
Data valid output window
REFRESH to REFRESH command interval
Average periodic refresh interval
Terminating voltage delay to V
Exit SELF REFRESH to non-READ command
Exit SELF REFRESH to READ command
Operating Conditions (-335, -262) (Continued)
DD
SYMBOL
18
t
t
WPRES
t
t
t
t
t
T
t
t
WPRE
t
WPST
t
t
XSNR
XSRD
RPRE
t
REFC
RPST
WTR
RRD
REFI
VTD
A
WR
na
+70°C; V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
184-PIN DDR SDRAM RDIMM
MIN
0.25
200
0.9
0.4
0.4
t
12
15
75
QH -
0
1
0
DD
512MB, 1GB (x72, ECC, SR)
-335
= V
t
DQSQ
MAX
70.3
1.1
0.6
0.6
7.8
DD
Q = +2.5V ±0.2V
MIN
0.25
t
200
0.9
0.4
0.4
15
15
QH -
75
0
1
0
-262
t
©2004 Micron Technology, Inc. All rights reserved.
DQSQ
MAX
70.3
1.1
0.6
0.6
7.8
UNITS
t
t
t
t
t
t
CK
CK
ns
CK
ns
CK
ns
CK
ns
µs
µs
ns
ns
CK
NOTES
18, 19
38
38
17
22
21
21