MT9HTF6472FY-53ED4E3 Micron Technology Inc, MT9HTF6472FY-53ED4E3 Datasheet
MT9HTF6472FY-53ED4E3
Specifications of MT9HTF6472FY-53ED4E3
Related parts for MT9HTF6472FY-53ED4E3
MT9HTF6472FY-53ED4E3 Summary of contents
Page 1
DDR2 SDRAM FBDIMM MT9HTF6472F – 512MB MT9HTF12872F – 1GB For the component data sheet, refer to Micron’s Web site: Features • 240-pin, DDR2 fully-buffered dual in-line memory module (FBDIMM) • Fast data transfer rates: PC2-4200, PC2-5300, or PC2-6400 • 512MB ...
Page 2
... Module rank address Table 3: Part Numbers and Timing Parameters – 512MB Base device: MT47H64M8, Module 2 Part Number Density MT9HTF6472FY-80E__ 512MB 512MB MT9HTF6472FY-667__ MT9HTF6472FY-53E__ 512MB Table 4: Part Numbers and Timing Parameters – 1GB Base device: MT47H128M8, Module 2 Part Number Density MT9HTF12872FY-80E__ 1GB 1GB ...
Page 3
Pin Assignments and Descriptions Table 5: Pin Assignments 240-Pin FBDIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol PN3 PN3 ...
Page 4
Table 6: Pin Descriptions Symbol Type Description PS0–PS9 Input Primary southbound data, positive lines. PS0#–PS9# Input Primary southbound data, negative lines. SCK Input System clock input, positive line. SCK# Input System clock Input, negative line. SCL Input Serial presence-detect (SPD) ...
Page 5
... Block Diagrams Commodity DDR2 DDR2 SDRAM component devices DDR2 component DDR2 component DDR2 component modules AMB • • • DDR2 component DDR2 component DDR2 component DDR2 component SMBus access to buffer registers Micron Technology, Inc., reserves the right to change products or specifications without notice. ...
Page 6
Figure 3: Functional Block Diagram CS0# DQS0 DQS0# DM0 DM DQ0 DQ DQ1 DQ DQ2 DQ DQ3 DQ DQ4 DQ DQ5 DQ DQ6 DQ DQ7 DQ DQS1 DQS1# DM5 DM DQ8 DQ DQ9 DQ DQ10 DQ DQ11 DQ DQ12 DQ ...
Page 7
... Serial Presence-Detect (SPD) for Fully Buffered DIMM – JEDEC Standard No. 21-C page 4.1.2.7-1 The MT9HTF6472F and MT9HTF12872F DDR2 SDRAM modules are high-bandwidth, large-capacity channel solutions that have a narrow host interface. FBDIMMs use DDR2 SDRAM devices isolated from the channel behind an AMB buffer on the FBDIMM. ...
Page 8
Electrical Specifications Stresses greater than those listed in Table 7 may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other conditions outside those indicated in the ...
Page 9
I Conditions and Specifications DD Table 10: I Conditions DD Symbol Condition I _Idle_0 Idle current, single or last DIMM: L0 state; Idle (0 percent bandwidth); Primary channel DD enabled; Secondary channel disabled; CKE HIGH; Command and address lines stable; ...
Page 10
Table 11: I Specifications – 512MB DDR2-533 DD Symbol I _Idle_0 2,200 CC I 1,060 DD 1 5.5 Total power Table 12: I Specifications – 512MB DDR2-667 DD Symbol I _Idle_0 2,600 ...
Page 11
Serial Presence-Detect Table 17: Serial Presence-Detect EEPROM DC Operating Conditions Parameter/Condition EEPROM and AMB supply voltage Input high voltage: logic 1; all inputs Input low voltage: logic 0; all inputs Output low voltage 3mA OUT Input leakage current: ...
Page 12
Table 19: Serial Presence-Detect Matrix – DRAM Device and Module Byte Description 0 CRC range/SPD bytes total/bytes used 1 SPD revision 2 Key byte/DRAM device type 3 Voltage levels of this assembly 4 SDRAM addressing: Device rows/columns/banks 5 Module physical ...
Page 13
Table 19: Serial Presence-Detect Matrix – DRAM Device and Module (continued) Byte Description Bits 7:4: ΔT 33 (MAX) (DRAM case temperature difference between C MAX case temperature and baseline MAX case temperature), the baseline MAX case temperature is 85°C; Bits ...
Page 14
Table 20: Serial Presence-Detect Matrix – AMB and CRC Byte Description 80 FBDIMM reserved byte 81 Channel protocol supported (lower byte) 82 Channel protocol supported (upper byte) 83 Back-to-back turnaround clock cycles t 84 Buffer read access at CK for ...
Page 15
Table 20: Serial Presence-Detect Matrix – AMB and CRC (continued) Byte Description 114 AMB postinitialization bytes 115 AMB manufacturer’s ID code (lower byte) 116 AMB manufacturer’s ID code (upper byte) 126–127 CRC for bytes 0–116 (512MB/1GB) 150 Informal AMB revision ...
Page 16
Module Dimensions Figure 4: 240-Pin DDR2 FBDIMM 66.68 (2.63) TYP 0.5 (0.02) R (4X) 1.5 (0.059 (4X) 2.6 (0.102) D (2X) 5.2 (0.205) TYP 1.25 (0.0492) Pin 1 TYP 1.0 (0.039) TYP 9.9 (0.39) TYP 5.48 (0.216) (x4) ...