DIODE IR EMITTING GAAS TO-46

SE5455-004

Manufacturer Part NumberSE5455-004
DescriptionDIODE IR EMITTING GAAS TO-46
ManufacturerHoneywell Sensing and Control
SE5455-004 datasheets
 

Specifications of SE5455-004

Viewing Angle20°Current - Dc Forward (if)100mA
Radiant Intensity (ie) Min @ If1.8mW/sr @ 100mAWavelength935nm
Voltage - Forward (vf) Typ1.7VOrientationTop View
Mounting TypeThrough HolePackage / CaseTO-46-2, Metal Can
Peak Wavelength935nmForward Current If(av)100mA
Rise Time700nsFall Time Tf700ns
Supply Voltage Range1.7VOperating Temperature Range-55°C To +125°C
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther names480-2984
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SE3455/5455
GaAs Infrared Emitting Diode
FEATURES
TO-46 metal can package
Choice of flat window or lensed package
90¡ or 20¡ (nominal) beam angle option
935 nm wavelength
Wide operating temperature range
(- 55¡C to +125¡C)
Ideal for high pulsed current applications
Mechanically and spectrally matched to
SD3421/5421 photodiode,
SD3443/5443/5491phototransistor,
SD3410/5410 photodarlington and SD5600
series Schmitt trigger
DESCRIPTION
The SE3455/5455 series consists of a gallium arsenide
infrared emitting diode mounted in a TO-46 metal can
package. The SE3455 series has flat window cans
providing a wide beam angle, while the SE5455 series
has glass lensed cans providing a narrow beam angle.
These devices are constructed with dual bond wires
suitable for pulsed current applications. The TO-46
packages offer high power dissipation capability and are
ideally suited for operation in hostile environments.
28
INFRA-83.TIF
OUTLINE DIMENSIONS in inches (mm)
Tolerance
3 plc decimals
±0.005(0.12)
2 plc decimals
±0.020(0.51)
SE3455
45°
.188 (4.77)
DIA.
.178 (4.52)
.046(1.17)
.500
.036(.91)
.219 (5.56)
DIA.
(12.70)
.208 (5.28)
MIN.
.048(1.22)
.028(.71)
.160 (4.06)
.015
DIA.
.137 (3.48)
(0.36)
.018
DIA.
(.460)
.153 (3.89)
LEADS:
.140 (3.56)
1. CATHODE (TAB)
2. ANODE
DIM_005a.ds4
SE5455
45°
.188 (4.77)
DIA.
.178 (4.52)
.046(1.17)
.500
.036(.91)
.219 (5.56)
DIA.
(12.70)
.208 (5.28)
MIN.
.048(1.22)
.015
.160 (4.06)
.028(.71)
DIA.
(0.36)
.137 (3.48)
.018
.200
DIA.
(.460)
5.08
.247 (6.27)
LEADS:
.224 (5.89)
1. CATHODE (TAB)
2. ANODE (CASE)
DIM_005b.ds4
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
.100(2.54)DIA
1
NOM
2
(CASE)
.100(2.54)DIA
1
NOM
2

SE5455-004 Summary of contents

  • Page 1

    ... The SE3455/5455 series consists of a gallium arsenide infrared emitting diode mounted in a TO-46 metal can package. The SE3455 series has flat window cans providing a wide beam angle, while the SE5455 series has glass lensed cans providing a narrow beam angle. These devices are constructed with dual bond wires suitable for pulsed current applications ...

  • Page 2

    SE3455/5455 GaAs Infrared Emitting Diode ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL ABSOLUTE MAXIMUM RATINGS (25¡C Free-Air Temperature unless otherwise noted) Continuous Forward Current Peak Forward Current (1µs pulse width, 300 pps) Power Dissipation Operating Temperature Range Storage Temperature Range Soldering Temperature (10 ...

  • Page 3

    ... Temperature 1.35 1.33 1.31 1.29 1.27 I =100 mA 1.25 F 1.23 1.21 -30 - Temperature - °C 30 Fig. 2 Radiant Intensity vs Angular Displacement (SE5455) gra_017.ds4 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -40 -30 Angular displacement - degrees Fig. 4 Forward Voltage vs Forward Current gra_018.ds4 1.35 1 ...

  • Page 4

    ... Case temperature - °C All Performance Curves Show Typical Values Honeywell reserves the right to make changes in order to improve design and supply the best products possible. Fig. 8 Coupling Characteristics SE5455 with SD5443 gra_021.ds4 1.0 0.8 0.6 0.4 0.2 0.0 0.8 1 Lens-to-lens distance - inches gra_022 ...