STEVAL-ISA054V1 STMicroelectronics, STEVAL-ISA054V1 Datasheet

BOARD DEMO STW9N150 100W 3PHASE

STEVAL-ISA054V1

Manufacturer Part Number
STEVAL-ISA054V1
Description
BOARD DEMO STW9N150 100W 3PHASE
Manufacturer
STMicroelectronics
Type
MOSFET & Power Driverr

Specifications of STEVAL-ISA054V1

Main Purpose
AC/DC, Primary Side
Outputs And Type
2, Isolated
Power - Output
100W
Voltage - Output
24V, 3.3V or 5V
Current - Output
4A, 1A
Voltage - Input
180 ~ 265VAC & 320 ~ 480VAC
Regulator Topology
Flyback
Frequency - Switching
250kHz
Board Type
Fully Populated
Utilized Ic / Part
L5970, STW9N150, UC3844B
Input Voltage
180 V to 265 V, 400 V
Output Voltage
3.3 V, 5 V, 24 V
Product
Power Management Modules
Silicon Manufacturer
ST Micro
Silicon Core Number
STW9N150
Kit Application Type
Power Management
Application Sub Type
Auxiliary Power Supply
Kit Contents
Board
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With/related Products
STW9N150
Other names
497-8849

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STEVAL-ISA054V1
Manufacturer:
STMicroelectronics
Quantity:
1
Features
Application
Description
Using the well consolidated high voltage MESH
OVERLAY™ process, STMicroelectronics has
designed an advanced family of Power MOSFETs
with outstanding performances. The strengthened
layout coupled with the company’s proprietary
edge termination structure, gives the lowest
R
switching characteristics.
Table 1.
January 2008
DS(on)
STW9N150
100% avalanche tested
Avalanche ruggedness
Gate charge minimized
Very low intrinsic capacitances
High speed switching
Very low on-resistance
Switching applications
Type
Order code
STW9N150
per area, unrivalled gate charge and
Device summary
1500 V
V
DSS
R
< 2.5 Ω
very high voltage PowerMESH™ Power MOSFET
DS(on)
Marking
9N150
8 A
I
D
N-channel 1500 V - 1.8 Ω - 8 A - TO-247
320 W
Pw
Rev 2
Figure 1.
Package
TO-247
Internal schematic diagram
TO-247
STW9N150
1
2
3
Packaging
Tube
www.st.com
1/12
12

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STEVAL-ISA054V1 Summary of contents

Page 1

... Very low on-resistance Application ■ Switching applications Description Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performances. The strengthened layout coupled with the company’s proprietary edge termination structure, gives the lowest R ...

Page 2

Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

STW9N150 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate- source voltage GS I Drain current (continuous Drain current (continuous (1) I Drain current (pulsed) DM ...

Page 4

Electrical characteristics 2 Electrical characteristics (Tcase =25°C unless otherwise specified) Table 5. On /off states Symbol Drain-source V (BR)DSS breakdown voltage Zero gate voltage I DSS drain current (V Gate-body leakage I GSS current (V V Gate threshold voltage V ...

Page 5

STW9N150 Table 7. Switching times Symbol t Turn-on delay time d(on) t Rise time r t Turn-off-delay time d(off) t Fall time f Table 8. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) ...

Page 6

Electrical characteristics Electrical characteristics (curves) 2.1 Figure 2. Safe operating area Figure 4. Output characteristics Figure 6. Normalized BV DSS 6/12 Figure 3. Figure 5. vs temperature Figure 7. R DS(on) (Ω) 1.9 1.8 1.7 1.6 1.5 0 STW9N150 Thermal ...

Page 7

STW9N150 Figure 8. Gate charge vs gate-source voltage Figure =1200V DD ( =10V Figure 10. Normalized gate threshold voltage vs temperature ...

Page 8

Test circuits 3 Test circuits Figure 14. Switching times test circuit for resistive load Figure 16. Test circuit for inductive load switching and diode recovery times Figure 18. Unclamped inductive waveform 8/12 Figure 15. Gate charge test circuit Figure 17. ...

Page 9

STW9N150 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the ...

Page 10

Package mechanical data DIM øP øR S 10/12 TO-247 MECHANICAL DATA mm. MIN. TYP MAX. 4.85 5.15 2.20 2.60 1.0 1.40 2.0 2.40 3.0 3.40 0.40 0.80 19.85 ...

Page 11

STW9N150 5 Revision history Table 9. Document revision history Date 24-May-2007 04-Jan-2007 Revision 1 First release 2 Document status promoted from preliminary data to datasheet Revision history Changes 11/12 ...

Page 12

... Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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