G3VM-S5 Omron, G3VM-S5 Datasheet

RELAY SSR SPST 150MA 4-SOP

G3VM-S5

Manufacturer Part Number
G3VM-S5
Description
RELAY SSR SPST 150MA 4-SOP
Manufacturer
Omron
Series
G3VMr
Datasheets

Specifications of G3VM-S5

Load Current
150mA
Circuit
SPST-NO (1 Form A)
Output Type
AC, DC
On-state Resistance
8 Ohm
Voltage - Input
1.15VDC
Voltage - Load
0 ~ 200 V
Mounting Type
Surface Mount
Termination Style
Gull Wing
Package / Case
4-SOP
Control Voltage Range
1 V to 1.3 V
Load Voltage Rating
200 V
Off State Leakage Current (max)
1 uA
Load Current Rating
150 mA
Contact Form
1 Form A
Output Device
MOSFET
Mounting Style
SMD/SMT
Relay Type
MOSFET Relay
Turn-on Switching
FET
Load Voltage Max
200VAC
On State Resistance Max
8ohm
Contact Configuration
SPST-NO
Isolation Voltage
1500Vrms
Forward Current If
7.5mA
Relay Terminals
SMD
No. Of Pins
4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
G3VM-S5-S
G3VMS5
Z162

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
G3VM-S5
Manufacturer:
OMRON
Quantity:
12 000
Part Number:
G3VM-S5(TR)
Manufacturer:
OMRON
Quantity:
12 000
Part Number:
G3VM-S5(TR)
Manufacturer:
OMRON
Quantity:
3 198
Part Number:
G3VM-S5-S
Manufacturer:
OMRON/欧姆龙
Quantity:
20 000
Introduction
New models with a wider range of characteristics provide an array of
solutions, meeting the needs of today’s high performance applications.
Our expanded range of MOS FET relays, Type G3VM, sets the
benchmark in Solid State Relays (SSRs). Products are manufactured
using the latest advances in automated production and include a
variety of improved construction technologies within the areas of the
input LED, PDA (Photo Diode Array used as a photocoupler) and
MOS FET chips used in the load switching circuit. As a result, further
reductions in package size and power requirements have been
achieved.
Combining the advantages of mechanical and solid state technology,
the new G3VM range gives you unprecedented capability to design.
All models featured include a double MOS FET load circuit, enabling
the designer complete versatility since it makes no difference
whether an AC or DC load in either direction is connected (Connec-
tion A). Thus, the MOS FET relay is a fully functional alternative to an
electromechanical relay with minimal additional drive circuitry.
Glossary
LED forward current
Repetitive peak LED forward
current
LED forward current
reduction rate
LED reverse voltage
Connection temperature
Load voltage (AC peak / DC)
Continuous load current
ON current reduction rate
Dielectric strength between
input and output
Operating temperature
Storage temperature
LED forward voltage
LED reverse current
Capacity between (LED)
terminals
Trigger LED forward current
Maximum resistance with
output ON
Current leakage when the
relay is open
Output Capacitance
Capacity between I/O
terminals
Insulation resistance
Turn-ON time
Turn-OFF time
Recommended Load Voltage
(AC peak / DC)
MOS FET Relays
Technical Information
Term
Symbol
<I
<I
V
I
V
R
C
R
t
V
ON
T
C
LEAK
t
I
V
V
C
I
F
T
OFF
I
T
I
I
OFF
ON
FP
FT
ON
DD
F
/°C
O
I-O
stg
R
I-O
I-O
off
R
a
J
F
T
/°C
Rated current that can flow continuously in the forward direction of the LED
Rated current that can flow momentarily in the forward direction of the LED
Rated change of forward current flowing through the LED relative to ambient temperature above 25°C
Rated reverse voltage that can be applied between the anode and the cathode
Rated temperature that can be allowed in the junction of the LED, Photodetector or MOS FET(s)
Rated voltage that can be applied between the MOS FET's output terminals in the OFF state
Rated current that can flow between the MOS FET's output terminals in the ON state
Rated change of load current flowing between MOS FET(s) output terminals relative to ambient tem-
perature above 25°C
Isolation voltage between input and output terminals for a specified time
Ambient temperature range in which the relay may be operated without impairment
Ambient temperature range in which the relay may be stored while not operating
Voltage drop between the LED's anode and cathode at a certain forward current
Leakage current flowing in the LED's reverse direction (between cathode and anode)
Electrostatic capacitance between the anode and the cathode terminals of the LED
Minimum value of input current necessary to put the output MOS FET(s) in to the ON state
Resistance between the MOS FET's output terminals specified with reference to ON state current
Leakage current flowing between the MOS FET's output terminals in the OFF state
Electrostatic capacitance between the output terminals in the OFF state
Electrostatic capacitance between the input and output terminals of the relay
Resistance between the input and output terminals at the specified voltage value
Time required for the output waveform to change from 0 (100%) to 90 (10%) after input goes from OFF
to ON state
Time required for the output waveform to change from 0 (100%) to 90 (10%) after input goes from ON
to OFF state
Rated load voltage that can be applied between the MOS FET's output terminals
MOS FET Relays
The built-in Current Limit Function (CLR models) has many uses.
Traditionally used to clamp excessive over current fault conditions in
telecom equipment, this feature can also be used to good effect to
resist transient and short circuit conditions.
MOS FET relays are the ideal data and telecommunication solution
for line seizing, line switching, hook switching, Data Access Arrange-
ment (DAA) function, line transformer circuit control and other feature
phone functions. Central office applications require high reliability
and long life. Here the G3VM is ideal for use in the areas of Sub-
scriber Line Interfaces (SLICs) Multiplexers and Routers. In addition,
Local Area Networks (LANs) and Network Termination Units (NTUs)
including Set-Top Boxes (STBs) and Remote Metering Systems
(RMS) can take advantage of the G3VMs’ small size and low ON
resistance.
Advances in performance and cost reduction enable MOS FET
relays to be considered as good alternatives to Reed Relays in appli-
cation areas such as security motion detectors (standard and anti-
mask PIRs), and Automated Test Equipment (ATE) probe cards.
Description
Technical Information
1

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G3VM-S5 Summary of contents

Page 1

... Central office applications require high reliability and long life. Here the G3VM is ideal for use in the areas of Sub- scriber Line Interfaces (SLICs) Multiplexers and Routers. In addition, Local Area Networks (LANs) and Network Termination Units (NTUs) including Set-Top Boxes (STBs) and Remote Metering Systems (RMS) can take advantage of the G3VMs’ ...

Page 2

... OMRON logo Model name LOT No. SSOP (Shrink Small Outline Package) Model name 211 OMRON mark LOT No. 228 Note: "G3VM" is not printed on the actual product. Technical Information 2 MOS FET Relays Typical Relay Driving Circuit Examples C-MOS Transistor 10 to 100 kΩ Use the following formula to obtain the LED current limiting resis- tance value to assure that the relay operates accurately. − ...

Page 3

... This may erase device markings important to confirm that nei- ther the solvent used for cleaning nor the cleaning conditions will damage the device package. Technical Information MOS FET Relays Or: Or: 6 Load − ...

Page 4

... Solder Mounting Perform solder mounting under the following recommended conditions to prevent the temperature of the relays from rising, causing possible damage to the relays. Flow Soldering Through Hole Packages (Once only) Solder type Preheating Temperature Temperature Lead solder 150°C, 260°C, ...

Page 5

MEMO ...

Page 6

... All sales are subject to Omron Electronic Components LLC standard terms and conditions of sale, which can be found at http://www.components.omron.com/components/web/webfiles.nsf/sales_terms.html ALL DIMENSIONS SHOWN ARE IN MILLIMETERS. To convert millimeters into inches, multiply by 0.03937. To convert grams into ounces, multiply by 0.03527. OMRON ELECTRONIC COMPONENTS LLC 55 E. Commerce Drive, Suite B ...

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