2SC3944 Panasonic Semiconductor, 2SC3944 Datasheet
2SC3944
Manufacturer Part Number
2SC3944
Description
Silicon NPN epitaxial planar type(For low-frequency driver and high power amplification)
Manufacturer
Panasonic Semiconductor
Datasheet
1.2SC3944.pdf
(2 pages)
Power Transistors
2SC3944, 2SC3944A
Silicon NPN epitaxial planar type
For low-frequency driver and high power amplification
Complementary to 2SA1535 and 2SA1535A
*
h
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Collector cutoff
current
Collector to base
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
FE1
Features
Satisfactory foward current transfer ratio h
rent I
High transition frequency f
Makes up a complementary pair with 2SA1535 and 2SA1535A,
which is optimum for the driver-stage of a 60 to 100W output
amplifier
Full-pack package which can be installed to the heat sink with
one screw
Absolute Maximum Ratings
Electrical Characteristics
Rank
h
FE1
Rank classification
Parameter
C
characteristics
Parameter
95 to 155
2SC3944
2SC3944A
2SC3944
2SC3944A
T
Ta=25 C
C
Q
=25 C
2SC3944
2SC3944A
2SC3944
2SC3944A
130 to 220
Symbol
V
V
V
I
I
P
T
T
CP
C
R
T
C
j
stg
CBO
CEO
EBO
I
V
V
h
h
V
V
f
C
CBO
T
FE1
FE2
(T
Symbol
CEO
EBO
CE(sat)
BE(sat)
ob
C
*
(T
=25˚C)
–55 to +150
C
=25˚C)
Ratings
150
180
150
180
150
1.5
2.0
15
5
1
FE
V
V
I
I
V
V
I
I
V
V
C
E
C
C
CB
CB
CE
CE
CB
CB
= 1mA, I
= 10 A, I
= 500mA, I
= 500mA, I
vs. collector cur-
= 10V, I
= 5V, I
= 150V, I
= 180V, I
= 10V, I
= 10V, I
C
B
Unit
C
Conditions
C
˚C
˚C
E
E
W
V
V
V
A
A
= 500mA
= 0
= 0
E
E
B
B
= 150mA
= –50mA, f = 10MHz
= 0, f = 1MHz
= 0
= 0
= 50mA
= 50mA
min
150
180
95
50
5
1
10.0 0.2
5.08 0.5
5.5 0.2
2
TO–220 Full Pack Package(a)
3
160
100
200
typ
0.5
30
2.54 0.25
1
1.4 0.1
0.8 0.1
3.1 0.1
2.7 0.2
1.3 0.2
max
0.5
220
10
10
50
2
2
+0.2
–0.1
4.2 0.2
1:Base
2:Collector
3:Emitter
Unit: mm
MHz
Unit
pF
V
V
V
V
A
1
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2SC3944 Summary of contents
Page 1
... Power Transistors 2SC3944, 2SC3944A Silicon NPN epitaxial planar type For low-frequency driver and high power amplification Complementary to 2SA1535 and 2SA1535A Features Satisfactory foward current transfer ratio h rent I characteristics C High transition frequency f T Makes up a complementary pair with 2SA1535 and 2SA1535A, which is optimum for the driver-stage 100W output ...
Page 2
... A ) Collector current — 400 V =10V CB f=10MHz T =25˚C C 300 200 100 0 – 0.01 – 0.03 – 0.1 – 0.3 – Emitter current I E 2SC3944, 2SC3944A V — I BE(sat = =–25˚ 100˚C 25˚C 0.3 0.1 0.03 0.01 0.01 0.03 0.1 0 Collector current — V ...