2SD667 Hitachi Semiconductor, 2SD667 Datasheet
2SD667
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2SD667 Summary of contents
Page 1
... Application Low frequency power amplifier Complementary pair with 2SB647/A Outline TO-92MOD Silicon NPN Epitaxial 1. Emitter 2. Collector 3. Base ...
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... FE2 Collector to emitter V CE(sat) saturation voltage Base to emitter voltage V BE Gain bandwidth product f T Collector output Cob capacitance Notes: 1. The 2SD667 and 2SD667A are grouped Pulse test B C 2SD667 60 to 120 100 to 200 2SD667A 60 to 120 100 to 200 2 Symbol 2SD667 ...
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... Base to Emitter Voltage V BE Typical Output Characteristics 1.0 35 0.8 0.6 0.4 0.2 0 150 Collector to Emitter Voltage V 300 250 200 150 100 (V) 2SD667, 2SD667A 0.5mA ( Current Transfer Ratio vs. Collector Current 10 30 100 300 ...
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... Gain Bandwidth Product vs. Collector Current 240 200 160 120 100 Collector Current I 4 Saturation Voltage vs. Collector Current 1 1.0 Pulse V 0.8 BE(sat) 0.6 0.4 0.2 V CE(sat Collector Current I 200 100 300 1,000 (mA) C 100 300 1,000 ...
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Max 0.60 Max 0.5 0.1 1.27 2.54 3.8 0.3 0.5 Hitachi Code TO-92 Mod JEDEC — EIAJ Conforms Weight (reference value) 0.35 g Unit: mm ...
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... This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. ...