2SD965 Panasonic Semiconductor, 2SD965 Datasheet

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2SD965

Manufacturer Part Number
2SD965
Description
Silicon NPN epitaxial planar type
Manufacturer
Panasonic Semiconductor
Datasheet

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Transistors
2SD0965
Silicon NPN epitaxial planar type
For low-frequency power amplification
For stroboscope
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: January 2003
• Low collector-emitter saturation voltage V
• Satisfactory operation performances at high efficiency with the low-
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
voltage power supply.
2. * : Rank classification
Parameter
Rank
Parameter
h
FE1
230 to 380
(2SD965)
Q
a
Symbol
= 25°C ± 3°C
V
V
V
Symbol
T
V
I
P
h
I
T
V
V
CBO
CEO
EBO
a
CP
I
I
I
h
C
stg
CE(sat)
C
C
FE1
340 to 600
CBO
CEO
EBO
j
f
CEO
EBO
FE2
= 25°C
T
ob
*
CE(sat)
R
−55 to +150
Rating
I
I
V
V
V
V
V
I
V
V
C
E
C
750
150
CB
Note) The part number in the parenthesis shows conventional part number.
CB
CE
EB
CE
CE
CB
40
20
= 10 µA, I
= 1 mA, I
= 3 A, I
7
5
8
SJC00200BED
= 10 V, I
= 7 V, I
= 2 V, I
= 2 V, I
= 6 V, I
= 10 V, I
= 20 V, I
B
= 0.1 A
E
B
C
C
C
C
Conditions
Unit
mW
B
E
E
= −50 mA, f = 200 MHz
= 0
= 0
= 0.5 A
= 1 A
°C
°C
V
V
V
A
A
= 0
= 0
= 0
= 0, f = 1 MHz
0.45
0.7
2.5
+0.15
–0.1
±0.1
+0.6
–0.2
1
5.0
Min
230
150
20
7
±0.2
2 3
2.5
0.28
+0.6
–0.2
Typ
150
26
0.45
TO-92-B1 Package
Max
1.00
600
0.1
0.1
50
1
+0.15
–0.1
4.0
1: Emitter
2: Collector
3: Base
Unit: mm
±0.2
MHz
Unit
µA
µA
µA
pF
V
V
V
1

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2SD965 Summary of contents

Page 1

... Transistors 2SD0965 (2SD965) Silicon NPN epitaxial planar type For low-frequency power amplification For stroboscope ■ Features • Low collector-emitter saturation voltage V • Satisfactory operation performances at high efficiency with the low- voltage power supply. ■ Absolute Maximum Ratings T Parameter Collector-base voltage (Emitter open) ...

Page 2

000 800 600 400 200 100 120 140 160 ( °C ) Ambient temperature T a  CE(sat ...

Page 3

Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...

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