2SK163 Hitachi Semiconductor, 2SK163 Datasheet
2SK163
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2SK163 Summary of contents
Page 1
... Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline LDPAK Gate 2. Drain 3. Source 4. Drain ...
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... Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes duty cycle 2. Value Symbol ...
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... V — 1.0 — — 400 — rr 2SK1636(L), 2SK1636(S) Unit Test conditions mA 100 200 mA, V ...
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... Power vs. Temperature Derating 120 Case Temperature T Typical Transfer Characteristics Drain to Source Voltage V 4 100 30 10 0.3 0.1 100 150 (°C) C 5.5 V Pulse Test (V) DS Maximum Safe Operation Area ...
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... A 0 0 0.5 120 160 0.5 (°C) C 2SK1636(L), 2SK1636(S) Static Drain to Source on State Resistance vs. Drain Current Pulse Test Drain Current I (A) D Forward Transfer Admittance vs. Drain Current Pulse Test T = – ...
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... Body to Drain Diode Reverse Recovery Time 1,000 500 200 100 50 di/dt = 100 25° 0 Reverse Drain Current I Dynamic Input Characteristics 500 100 V 400 200 300 V DS 200 100 V = 200 V DD 100 ...
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... Source to Drain Voltage V ( 100 m Pulse Width PW (s) Vout Monitor Vin 10 Vout (on) 2SK1636(L), 2SK1636(S) 2 25°C C ch–c (t) = (t) · ch–c S ch–c = 1.67°C/ 25° Waveforms 90% 10% 10% 90% 90% ...
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Hitachi Code LDPAK (L) JEDEC — EIAJ — Weight (reference value) 1.4 g Unit: mm ...
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... This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. ...