2SK30 Panasonic Semiconductor, 2SK30 Datasheet
2SK30
Manufacturer Part Number
2SK30
Description
Silicon N-Channel Power F-MOS FET
Manufacturer
Panasonic Semiconductor
Datasheet
1.2SK30.pdf
(2 pages)
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Power F-MOS FETs
2SK3049
Silicon N-Channel Power F-MOS FET
*
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Avalanche energy capacity
Allowable power
dissipation
Channel temperature
Storage temperature
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time (delay time)
Rise time
Turn-off time (delay time)
Fall time
Avalanche energy capacity guaranteed
High-speed switching
Low ON-resistance
No secondary breakdown
Contactless relay
Diving circuit for a solenoid
Driving circuit for a motor
Control equipment
Switching power supply
L = 5mH, I
Features
Applications
Absolute Maximum Ratings
Electrical Characteristics
Parameter
Parameter
L
= 5A, 1 pulse
DC
Pulse
T
Ta = 25°C
C
= 25°C
Symbol
V
V
I
I
EAS
P
T
T
Symbol
I
I
V
V
R
| Y
V
C
C
C
t
t
t
t
d(on)
r
d(off)
f
D
DP
DSS
GSS
D
ch
stg
DS(on)
iss
oss
rss
DSS
GSS
DSS
th
DSF
fs
(T
|
*
C
(T
= 25°C)
C
= 25°C)
V
V
I
V
V
V
I
V
V
V
D
DR
DS
GS
DS
GS
DS
DS
DD
GS
55 to +150
Ratings
= 1mA, V
= 5A, V
= 480V, V
= ±30V, V
= 25V, I
= 10V, I
= 25V, I
= 20V, V
= 10V, R
62.5
= 200V, I
600
±30
±10
150
±5
40
2
GS
Conditions
GS
D
D
D
GS
L
D
= 1mA
= 3A
= 3A
= 0
GS
DS
= 0
= 66.6
= 3A
= 0, f = 1MHz
= 0
= 0
Unit
mJ
°C
°C
W
V
V
A
A
min
600
1.7
2
1
9.9±0.3
2
3
1200
0.85
140
150
5.08±0.5
typ
3.4
40
20
30
50
2.54±0.3
0.8±0.1
1.4±0.2
1.6±0.2
3.2±0.1
max
100
1.5
±1
1.6
TO-220D Package
5
4.6±0.2
0.55±0.15
1: Gate
2: Drain
3: Source
unit: mm
2.6±0.1
2.9±0.2
Unit
pF
pF
pF
ns
ns
ns
ns
V
V
V
S
A
A
1
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2SK30 Summary of contents
Page 1
... Power F-MOS FETs 2SK3049 Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed High-speed switching Low ON-resistance No secondary breakdown Applications Contactless relay Diving circuit for a solenoid Driving circuit for a motor Control equipment Switching power supply Absolute Maximum Ratings Parameter Symbol ...
Page 2
... R I DS(on) D 2.5 V =10V GS T =100˚C C 2.0 1.5 25˚C 1.0 0˚C 0 Drain current (1) ( 2SK3049 IAS L-load 10 IAS max 0.3 0.1 0.03 0.01 160 0.1 0 L-load ( =25V DS T =0˚ 25˚C 100˚ ...