K30A Xiaosheng, K30A Datasheet
K30A
Manufacturer Part Number
K30A
Description
Search -----> 2SK30A
Manufacturer
Xiaosheng
Datasheet
1.K30A.pdf
(1 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
K30A-GR
Manufacturer:
TOSHIBA
Quantity:
38 000
Company:
Part Number:
K30A-Y
Manufacturer:
TOSHIBA
Quantity:
189 990
Part Number:
K30AGR
Manufacturer:
TOSHIBA/东芝
Quantity:
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Part Number:
K30AY/GR
Manufacturer:
TOS无铝
Quantity:
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LH03 Series of Products interconvert:
Silicon N-Chinnel Junction FET
Drain to Source cut-off current
Gate to Source leakage current
Gate to Drain voltage
Gate to Source cut-off voltage
Forward transfer admittamce
Input capacitance
Reverse transfer capacitance (Common Source)
I
Marking Symbol
Gate to Drain voltage
Gate to Source voltage
Gate current
Allowable power dissipation
Junction Temperature
Storage Temperature
DSS
For charge sensor, meter amplifier circuit, rheostat , chopper and
gain controller for AGC ，electronic switch.
Silicon Junction FETs
Application:
Absolute Maximum Ratings (Ta=25
Electrical Characteristics (Ta=25
I
Tel: 86-021-64859219 Fax: 86-021-64859219
DSS
(mA)
Runk
Rank Classification
2SK30A
Parameter
Prameter
(Common Source)
Room 206 3rd building 195-16 Tianlin RD. Shanghai China
Xiaosheng Electronic & Telechnology CO. ,LTD.
0.3 to 0.75
035D
R
V
Symbol
Symbol
V
V
V
GS(OFF)
| Y
I
I
T
C
C
P
DSS
GSS
GDO
I
T
GSO
GDS
G
stg
iss
rss
D
fs
j
℃
℃
|
)
)
V
V
I
V
V
V
-55 to +125
G
DS
DS
DS
GS
DS
Ratings
= -100μA，V
0.6 to 1.4
= 10V， V
= 10V， V
= -30V, V
250
125
-50
-50
= 10V, V
= 10V, I
10
035E
www.on-ele.org Email:xiaosheng_sh@126.com
O
Conditions
GS
GS
D
GS
= 0V， f = 1MHZ
DS
= 0V， f = 1KHZ
= 0.1μA
DS
mW
mA
Unit
= 0V
℃
℃
= 0V
V
V
= 0V
1.2 to 3.0
035F
Symbol
Package example:
*
Y
Gate
XIAOSHENG
Package
-0.4
-50
min
0.3
1.2
SC-59
SOT-23
TO-92S
TO-92
TO-18
:
8.2
2.6
typ
3
D
2.6 to 6.5
Drain
Source
-1.0
-5.0
max
6.5
035G
1
S
GR
2
G
Unit
mS
nA
mA
pF
pF
V
V
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