7N60 UTC [Unisonic Technologies], 7N60 Datasheet

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7N60

Manufacturer Part Number
7N60
Description
7.4 Amps, 600 Volts N-CHANNEL MOSFET
Manufacturer
UTC [Unisonic Technologies]
Datasheet

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7N60
7.4 Amps, 600 Volts
N-CHANNEL MOSFET
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in switching power supplies and adaptors.
* R
* Low gate and reverse transfer Capacitance ( C: 16 pF typical )
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
1.Gate
DS(ON)
The UTC 7N60 is a high voltage MOSFET and is designed to
DESCRIPTION
FEATURES
SYMBOL
ORDERING INFORMATION
7N60-TA3-T
7N60-TF3-T
= 1Ω @V
7N60L-TA3-T
Normal
UNISONIC TECHNOLOGIES CO., LTD
GS
Order Number
= 10 V
2.Drain
3.Source
(1)Packing Type
(2)Package Type
(3)Lead Plating
Lead Free Plating
7N60L-TA3-T
7N60L-TF3-T
TO-220F
Package
TO-220
(1) T: Tube
(2) TA3: TO-220, TF3: TO-220F
(3) L: Lead Free Plating , Blank: Pb/Sn
G
G
1
Pin Assignment
*Pb-free plating product number:7N60L
D
D
2
1
1
S
S
3
Power MOSFET
Packing
Tube
Tube
TO-220F
TO-220
QW-R502-076,B
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7N60 Summary of contents

Page 1

... Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors ...

Page 2

... ABSOLUTE MAXIMUM RATINGS ( PARAMETER Drain-Source Voltage Gate-Source Voltage Avalanche Current (Note 1) Continuous Drain Current Pulsed Drain Current (Note 1) Avalanche Energy, Single Pulsed (Note 2) Avalanche Energy, Repetitive Limited by T Peak Diode Recovery dv/dt (Note 3) Power Dissipation (T = 25℃) C Derate above 25℃ Junction Temperature Operating and Storage Temperature Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged ...

Page 3

... ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER Drain-Source Diode Characteristics and Maximum Ratings Drain-Source Diode Forward Voltage Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Reverse Recovery Time Reverse Recovery Charge Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2 ...

Page 4

... TEST CIRCUITS AND WAVEFORMS P.W. (Driver (D.U.T (D.U.T.) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw + D.U. Driver * dv/dt controlled Same Type * D.U.T.-Device Under Test GS as D.U.T. Fig. 1A Peak Diode Recovery dv/dt Test Circuit Period I , Body Diode Forward Current FM Body Diode Reverse Current Body Diode Recovery dv /dt ...

Page 5

... TEST CIRCUITS AND WAVEFORMS (Cont 10V Pulse Width ≤ 1μs Duty Factor ≤0.1% Fig. 2A Switching Test Circuit 50kΩ 12V 0.3μF 0.2μ 3mA Fig. 3A Gate Charge Test Circuit 10V t p Fig. 4A Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO ...

Page 6

... TYPICAL CHARACTERISTICS On-Region Characteristics V GS Top: 15. .0V 7 .0V 6 .5V 6 .0V Bottorm :5. *Notes: 1. 250μs Pulse Test - Drain-Source Voltage, V On-Resistance Variation vs. Drain Current and Gate Voltage 2.5 V =10V 2 =20V GS 1.5 1.0 0.5 0 Drain Current , I Capacitance Characteristics ...

Page 7

... UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury ...

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