ALD1101 Advanced Linear Devices, ALD1101 Datasheet

ALD1101

Manufacturer Part Number

ALD1101

Description

DUAL N-CHANNEL MATCHED MOSFET PAIR

Manufacturer

Advanced Linear Devices

Datasheet

1.ALD1101.pdf (4 pages)

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Download datasheet (30Kb)

FEATURES

• Low threshold voltage of 0.7V

• Low input capacitance

• Low Vos grades -- 2mV, 5mV, 10mV

• High input impedance -- 10

• Negative current (I

• Enhancement-mode (normally off)

• DC current gain 10

ORDERING INFORMATION

* Contact factory for industrial temperature range.

GENERAL DESCRIPTION

The ALD1101 is a monolithic dual N-channel matched transistor pair

intended for a broad range of analog applications. These enhancement-

mode transistors are manufactured with Advanced Linear Devices' en-

hanced ACMOS silicon gate CMOS process.

The ALD1101 offers high input impedance and negative current tempera-

ture coefficient. The transistor pair is matched for minimum offset voltage

and differential thermal response, and it is designed for switching and

amplifying applications in +2V to +12V systems where low input bias

current, low input capacitance and fast switching speed are desired. Since

these are MOSFET devices, they feature very large (almost infinite)

current gain in a low frequency, or near DC, operating environment. When

used with an ALD1102, a dual CMOS analog switch can be constructed.

In addition, the ALD1101 is intended as a building block for differential

amplifier input stages, transmission gates, and multiplexer applications.

The ALD1101 is suitable for use in precision applications which require

very high current gain, beta, such as current mirrors and current sources.

The high input impedance and the high DC current gain of the Field Effect

Transistors result in extremely low current loss through the control gate.

The DC current gain is limited by the gate input leakage current, which is

specified at 50pA at room temperature. For example, DC beta of the device

at a drain current of 5mA at 25 C is = 5mA/50pA = 100,000,000.

coefficient

-55 C to +125 C

8-Pin

CERDIP

Package

ALD1101 DA

INEAR

DVANCED

EVICES,

Operating Temperature Range*

) temperature

NC.

0 C to +70 C

8-Pin

Plastic Dip

Package

ALD1101A PA

ALD1101B PA

ALD1101 PA

DUAL N-CHANNEL MATCHED MOSFET PAIR

typical

0 C to +70 C

8-Pin

SOIC

Package

ALD1101 SA

PIN CONFIGURATION

BLOCK DIAGRAM

APPLICATIONS

• Precision current mirrors

• Precision current sources

• Analog switches

• Choppers

• Differential amplifier

• Voltage comparator

• Data converters

• Sample and Hold

• Analog inverter

SOURCE

input stage

DRAIN

GATE

DRAIN 2 (5)

DRAIN 1 (3)

DA, PA, SA PACKAGE

ALD1101A/ALD1101B

TOP VIEW

GATE 1 (2)

GATE 2 (6)

SUBSTRATE (8)

SOURCE 2 (7)

SOURCE 1 (1)

ALD1101

SUBSTRATE

SOURCE

GATE

DRAIN

Related parts for ALD1101

ALD1101 Summary of contents

Page 1

... DC, operating environment. When used with an ALD1102, a dual CMOS analog switch can be constructed. In addition, the ALD1101 is intended as a building block for differential amplifier input stages, transmission gates, and multiplexer applications. The ALD1101 is suitable for use in precision applications which require very high current gain, beta, such as current mirrors and current sources ...

Page 2

... Advanced Linear Devices - +125 C - +150 C ALD1101 Test Min Typ Max Unit Conditions 0.4 0.7 1 100 -1.2 mV mmho ...

Page 3

... DRAIN -SOURCE VOLTAGE (V) R vs. GATE - SOURCE VOLTAGE DS (ON) 10000 1000 100 GATE SOURCE VOLTAGE (V) ALD1101A/ALD1101B ALD1101 V = 12V GS 10V 10mA +125 Advanced Linear Devices ...

Page 4

... ALD1101A/ALD1101B ALD1101 Advanced Linear Devices 4 ...

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