AO4422 ETC, AO4422 Datasheet
AO4422
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AO4422 Summary of contents
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... AO4422 N-Channel Enhancement Mode Field Effect Transistor General Description The AO4422 uses advanced trench technology to provide excellent R and low gate charge. This DS(ON) device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance ...
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... AO4422 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...
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... AO4422 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 4V 10V 25 4. (Volts) DS Fig 1: On-Region Characteristics (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25° (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & ...
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... AO4422 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 V =15V DS I =11A (nC) g Figure 7: Gate-Charge Characteristics 100.0 R 100µs DS(ON) limited 1ms 10.0 10ms 0.1s 1.0 T =150°C J(Max) T =25°C A 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 ...