AOD454 Alpha & Omega Semiconductor, AOD454 Datasheet

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AOD454

Manufacturer Part Number
AOD454
Description
N-channel Enhancement Mode Field Effect Transistor
Manufacturer
Alpha & Omega Semiconductor
Datasheet

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Alpha & Omega Semiconductor, Ltd.
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
Repetitive avalanche energy L=0.1mH
Power Dissipation
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Case
General Description
The AOD454 uses advanced trench technology and
design to provide excellent R
charge. This device is suitable for use in PWM, load
switching and general purpose applications. Standard
Product AOD454 is Pb-free (meets ROHS & Sony
259 specifications).
AOD454
N-Channel Enhancement Mode Field Effect Transistor
G
B
A
C
G
C
T
T
T
T
T
T
TO-252
D-PAK
C
C
C
C
A
A
=25°C
=70°C
=25°C
=100°C
=25°C
=100°C
D
B
DS(ON)
S
A
A
A
=25°C unless otherwise noted
with low gate
Top View
Drain Connected to
Tab
C
Steady-State
Steady-State
t ≤ 10s
Symbol
V
V
I
I
I
E
P
P
T
D
DM
AR
J
DS
GS
AR
D
DSM
, T
STG
Symbol
Features
V
I
R
R
R
D
R
DS
DS(ON)
DS(ON)
θJA
θJC
= 12 A (V
(V) = 40V
< 33 mΩ (V
< 47 mΩ (V
Maximum
-55 to 175
G
GS
17.4
Typ
±20
1.3
2.3
40
12
12
30
12
20
50
25
50
2
= 10V)
GS
GS
D
S
= 10V)
= 4.5V)
Max
30
60
3
Units
Units
°C/W
°C/W
°C/W
mJ
°C
W
W
V
V
A
A

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AOD454 Summary of contents

Page 1

... N-Channel Enhancement Mode Field Effect Transistor General Description The AOD454 uses advanced trench technology and design to provide excellent R DS(ON) charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOD454 is Pb-free (meets ROHS & Sony 259 specifications). TO-252 D-PAK Absolute Maximum Ratings T =25° ...

Page 2

... AOD454 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...

Page 3

... AOD454 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 10V (Volts) DS Fig 1: On-Region Characteristics =4. (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 100 125° 25° ...

Page 4

... AOD454 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 V =20V DS I =12A (nC) g Figure 7: Gate-Charge Characteristics 100.0 T =175°C, T =25°C J(Max DS(ON) limited 10.0 1ms 1.0 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note ...

Page 5

... AOD454 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS =25° 0.00001 0.0001 Time in avalanche, t Figure 12: Single Pulse Avalanche capability 100 T (°C) CASE Figure 14: Current De-rating (Note θJA θJA ...

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