BC239 Fairchild, BC239 Datasheet
BC239
Manufacturer Part Number
BC239
Description
NPN EPITAXIAL SILICON TRANSISTOR
Manufacturer
Fairchild
Datasheet
1.BC239.pdf
(3 pages)
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BC237/238/239
SWITCHING AND AMPLIFIER APPLICATIONS
ABSOLUTE MAXIMUM RATINGS (T
ELECTRICAL CHARACTERISTICS (T
h
Collector-Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Collector Base Saturation Voltage
Base Emitter On Voltage
Current Gain Bandwidth Product
Collector Base Capacitance
Emitter Base Capacitance
Noise Figure
LOW NOISE: BC239
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Dissipation
Junction Temperature
Storage Temperature
FE
1999 Fairchild Semiconductor Corporation
Classification
CLASSIFICATION
h
FE
Characteristic
Characteristic
: BC238/239
: BC238/239
: BC238/239
120-220
: BC237
: BC237
: BC237
A
: BC237/238
: BC239
: BC238/239
: BC238/239
: BC238/239
: BC239
:BC237
: BC237
: BC237
V
V
V
I
P
T
T
Symbol
C
CES
CEO
EBO
C
J
STG
180-460
BV
BV
I
h
V
V
V
f
C
C
NF
NF
CES
T
Symbol
FE
CE
BE
BE
CBO
EBO
B
A
CEO
EBO
(sat)
(sat)
=25 C)
A
(on)
=25 C)
NPN EPITAXIAL SILICON TRANSISTOR
-55 ~ 150
Rating
100
500
150
50
30
45
25
6
5
I
I
V
V
V
I
I
I
I
V
V
V
V
V
V
f=1KHz R
V
R
C
E
C
C
C
C
=2mA, I
=1 A, I
CE
CE
CE
=10mA, I
=100mA, I
=10mA, I
=100mA, I
CE
CE
CE
CB
EB
CE
CE
G
=2kohm, f=30~15KHz
=50V, I
=30V, I
=5V, I
=5V, I
=3V, I
=5V, I
=10V, f=1MHz
=0.5V, f=1MHz
=5V, I
=5V, I
Test Conditions
380-800
C
C
Unit
mW
B
C
C
C
C
C
C
mA
G
=0
=0
=2mA
=2mA
=0.5mA
=10mA
=0.2mA,
=0.2mA
V
V
V
V
V
V
B
B
B
B
=2kohm
C
C
=0
=0
=0.5mA
=0.5mA
B
B
=5mA
=5mA
TO-92
1. Collector 2. Base 3. Emitter
Min
0.55
120
150
45
25
6
5
Typ
0.07
0.73
0.87
0.62
250
0.2
0.2
0.2
3.5
85
8
2
Max
0.83
1.05
800
0.2
0.6
0.7
15
15
10
6
4
4
MHz
MHz
Unit
Rev. B
nA
nA
pF
pF
dB
dB
dB
V
V
V
V
V
V
V
V
V
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BC239 Summary of contents
Page 1
... BC237/238/239 SWITCHING AND AMPLIFIER APPLICATIONS LOW NOISE: BC239 ABSOLUTE MAXIMUM RATINGS (T Characteristic Symbol Collector-Emitter Voltage V CES : BC237 : BC238/239 Collector-Emitter Voltage V CEO : BC237 : BC238/239 Emitter-Base Voltage V EBO : BC237 : BC238/239 Collector Current (DC Collector Dissipation P C Junction Temperature T J Storage Temperature T STG ELECTRICAL CHARACTERISTICS (T ...
Page 2
BC237/238/239 NPN EPITAXIAL SILICON TRANSISTOR ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ ...