BC308 Fairchild Semiconductor, BC308 Datasheet

TRANSISTOR PNP 25V 100MA TO-92

BC308

Manufacturer Part Number
BC308
Description
TRANSISTOR PNP 25V 100MA TO-92
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of BC308

Transistor Type
PNP
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
25V
Vce Saturation (max) @ Ib, Ic
500mV @ 5mA, 100mA
Current - Collector Cutoff (max)
15nA
Dc Current Gain (hfe) (min) @ Ic, Vce
120 @ 2mA, 5V
Power - Max
500mW
Frequency - Transition
130MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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©2002 Fairchild Semiconductor Corporation
Switching and Amplifier Applications
• Low Noise: BC309
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
V
V
V
I
P
T
T
C
J
STG
CES
CEO
EBO
C
Symbol
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Power Dissipation
Junction Temperature
Storage Temperature
: BC307
: BC308/309
: BC307
: BC308/309
BC307/308/309
T
Parameter
a
=25 C unless otherwise noted
1. Collector 2. Base 3. Emitter
1
-55 ~ 150
Value
-100
500
150
-50
-30
-45
-25
-5
TO-92
Rev. A2, August 2002
Units
mW
mA
V
V
V
V
V
C
C

Related parts for BC308

BC308 Summary of contents

Page 1

... Emitter-Base Voltage EBO I Collector Current (DC Collector Power Dissipation C T Junction Temperature J T Storage Temperature STG ©2002 Fairchild Semiconductor Corporation BC307/308/309 T =25 C unless otherwise noted a Parameter : BC307 : BC308/309 : BC307 : BC308/309 TO- Collector 2. Base 3. Emitter Value Units -50 V -30 V - -100 mA 500 mW 150 C -55 ~ 150 C Rev ...

Page 2

... BV Collector-Emitter Breakdown Voltage CEO : BC307 : BC308/309 BV Collector-Emitter Breakdown Voltage CES : BC307 : BC308/309 BV Emitter-Base Breakdown Voltage EBO I Collector Cut-off Current CES : BC307 : BC308/309 h DC Current Gain FE V (sat) Collector-Emitter Saturation Voltage CE V (sat) Collector-Base Saturation Voltage BE V (on) Base-Emitter On Voltage BE f Current Gain Bandwidth Product ...

Page 3

... Figure 1. Static Characteristic - - (sat -0.1 V (sat) CE -0.01 -0 [mA], COLLECTOR CURRENT C Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage -10 V [V], COLLECTOR-BASE VOLTAGE CB Figure 5. Collector Output Capacitance ©2002 Fairchild Semiconductor Corporation 1000 = -350 -300 A B 100 I = -250 -200 -150 -100 - -0.1 -12 -14 -16 -18 -20 -100 ...

Page 4

... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2002 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. A2, August 2002 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...

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