BCY59 Central Semiconductor Corp., BCY59 Datasheet

no-image

BCY59

Manufacturer Part Number
BCY59
Description
Npn Silicon Transistor
Manufacturer
Central Semiconductor Corp.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BCY59
Manufacturer:
ST
Quantity:
1 363
Part Number:
BCY59
Manufacturer:
ST
0
Part Number:
BCY59
Manufacturer:
ST/MOTO
Quantity:
20 000
Part Number:
BCY59-8
Manufacturer:
ST
0
Part Number:
BCY59-I
Manufacturer:
ST
0
Part Number:
BCY59-X
Manufacturer:
ST
0
Part Number:
BCY591
Manufacturer:
UDT
Quantity:
8 510
Part Number:
BCY591X
Manufacturer:
ST
0
Part Number:
BCY592
Manufacturer:
PHILIPS
Quantity:
5 000
Part Number:
BCY59C
Manufacturer:
NXP
Quantity:
3 001
Part Number:
BCY59CPL
Manufacturer:
FITIPOWER
Quantity:
3 000
Part Number:
BCY59IX
Manufacturer:
ST
Quantity:
20 000
DESCRIPTION
The CENTRAL SEMICONDUCTOR BCY58, BCY59 Series types are Silicon NPN Epitaxial Planar Transistors,
mounted in a hermetically sealed metal case, designed for low noise amplifier and switching applications.
MAXIMUM RATINGS (T A =25°C unless otherwise noted)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current (Peak)
Base Current (Peak)
Power Dissipation
Power Dissipation(T C =25°C)
Operating and Storage
Junction Temperature
Thermal Resistance
Thermal Resistance
ELECTRICAL CHARACTERISTICS (T A =25°C unless otherwise noted)
SYMBOL
I CBO
I CBO
I EBO
BV CBO
BV CBO
BV CEO
BV CEO
BV EBO
V CE(SAT)
V CE(SAT)
V BE(SAT)
V BE(SAT)
SYMBOL
h FE
h FE
h FE
h FE
TEST CONDITIONS
V CB = Rated V CBO
V CB = Rated V CBO , T A =150°C
V EB =5.0V
I C =10µA (BCY58)
I C =10µA (BCY59)
I C =2.0mA (BCY58)
I C =2.0mA (BCY59)
I E =1.0µA
I C =10mA, I B =250µA
I C =100mA, I B =2.5mA
I C =10mA, I B =250µA
I C =100mA, I B =2.5mA
TEST CONDITIONS
V CE =5.0V, I C =10µA
V CE =5.0V, I C =2.0mA
V CE =1.0V, I C =10mA
V CE =1.0V, I C =100mA
SYMBOL
MIN
120
T J ,T stg
BCY58-VII
BCY59-VII
80
40
(SEE REVERSE SIDE)
V CBO
V CEO
V EBO
I C
I CM
I BM
P D
P D
JA
JC
20 TYP
MAX
220
MIN
180
120
BCY58-VIII
BCY59-VIII
20
45
BCY58
MAX
310
400
32
32
-65 to +200
NPN SILICON TRANSISTOR
250
MIN
MIN
160
32
45
32
45
7.0
0.60
0.75
100
200
200
340
450
150
BCY58-IX
BCY59-IX
40
60
7.0
1.0
BCY58, VII, VIII, IX, X
BCY59, VII, VIII, IX, X
JEDEC TO-18 CASE
BCY59
MAX
460
630
45
45
MAX
MIN
100
380
240
0.35
0.70
0.85
1.20
10
10
10
BCY58-X
BCY59-X
60
MAX
630
1000
DATA SHEET
UNITS
°C
°C/W
°C/W
UNITS
mA
mA
mA
mW
nA
µA
nA
V
V
V
V
V
V
V
V
V
V
V
V
W
R1

Related parts for BCY59

BCY59 Summary of contents

Page 1

... DESCRIPTION The CENTRAL SEMICONDUCTOR BCY58, BCY59 Series types are Silicon NPN Epitaxial Planar Transistors, mounted in a hermetically sealed metal case, designed for low noise amplifier and switching applications. MAXIMUM RATINGS (T A =25°C unless otherwise noted) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage ...

Page 2

... BCY58/BCY59 ELECTRICAL CHARACTERISTICS Continued SYMBOL TEST CONDITIONS =5.0V =10mA, f=100MHz =10V =0, f=1.0MHz =0.5V =0, f=1.0MHz =5.0V =200µ =2k , f=1.0kHz, B=200Hz =10V =10mA =-I B2 =1.0mA =10V =10mA =-I B2 =1.0mA =10V =10mA =- ...

Related keywords