BSO615 Infineon Technologies AG, BSO615 Datasheet

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BSO615

Manufacturer Part Number
BSO615
Description
SIPMOS Small-Signal-Transistor
Manufacturer
Infineon Technologies AG
Datasheet

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SIPMOS
Features
Type
BSO 615 C
Maximum Ratings,at T
Parameter
Continuous drain current
T
T
Pulsed drain current
T
Avalanche energy, single pulse
I
I
Avalanche energy, periodic limited by T
Reverse diode d v /d t, T
I
I
Gate source voltage
Power dissipation
T
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
D
D
S
S
Enhancement mode
A
A
A
A
Dual N- and P -Channel
Logic Level
Avalanche rated
d v /d t rated
= 3.1 A, V
= -2 A, V
= 3.1 A , V
= -2 A , V
= 25 °C
= 70 °C
= 25 °C
= 25 °C
DS
DS
DD
Small-Signal-Transistor
DD
= -48 V, d i /d t = -200 A/µs
= 48 V, d i /d t = 200 A/µs
Package
SO 8
= -25 V, R
= 25 V, R
jmax
j
= 25 °C, unless otherwise specified
GS
GS
= 150 °C
= 25
= 25
Product Summary
Drain source voltage
Drain-Source on-state
resistance
Continuous drain current
Preliminary data
Ordering Code
Q67041-S4024
jmax
Page 1
Symbol
I
I
E
E
d v /d t
V
P
T
D
D puls
AS
AR
GS
tot
j ,
T
stg
V
R
I
D
DS
DS(on)
12.4
±20
3.1
2.5
0.2
47
N
6
2
-
-
-55...+150
55/150/56
0.11
3.1
Value
60
N
BSO 615 C
-1.6
±20
0.2
70
-2
-8
P
6
2
-
-
1999-10-28
-60
0.3
-2
P
Unit
A
mJ
kV/µs
V
W
°C
V
A

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BSO615 Summary of contents

Page 1

SIPMOS Small-Signal-Transistor Features Dual N- and P -Channel Enhancement mode Logic Level Avalanche rated rated Type Package BSO 615 Maximum Ratings, °C, unless otherwise specified j Parameter Continuous drain current ...

Page 2

Termal Characteristics Parameter Dynamic Characteristics Thermal resistance, junction - soldering point ( Pin 4) SMD version, device on PCB: @ min. footprint sec cooling area ; t @ min. footprint sec. ...

Page 3

Electrical Characteristics Parameter Characteristics Transconductance DS(on)max DS(on)max Input capacitance ...

Page 4

Electrical Characteristics Parameter Characteristics Gate to source charge 3 - Gate to drain charge ...

Page 5

Power Dissipation (N-Ch tot A BSO 615 C 2.2 W 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 Drain current (N-Ch ...

Page 6

Safe operating area (N-Ch parameter : °C A BSO 615 ...

Page 7

Typ. output characteristics (N-Ch parameter µs p BSO 615 C 7 2.00W tot 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 ...

Page 8

Typ. transfer characteristics (N-Ch.) parameter µ 7.0 A 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 ...

Page 9

Drain-source on-resistance (N-Ch DS(on) j parameter : BSO 615 C 0.30 0.24 0.22 0.20 0.18 0.16 98% 0.14 0.12 0.10 typ 0.08 0.06 0.04 0.02 0.00 ...

Page 10

Typ. capacitances (N-Ch parameter MHz Forward characteristics of reverse diode (N-Ch.) ...

Page 11

Avalanche Energy parameter 3 105 Typ. gate charge ...

Page 12

Drain-source breakdown voltage (N-Ch.) (BR)DSS j BSO 615 -60 - Preliminary data Drain-source breakdown voltage V (BR)DSS -72 V -68 -66 ...

Page 13

... Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein ...

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