BSS110 Fairchild Semiconductor, BSS110 Datasheet

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... High density cell design for low R High saturation current BSS110 T = 25°C unless otherwise noted A BSS84 o = 30/35 C -0. -0. ° 0.36 A 350 May 2000 = -5V. DS(ON -10V DS(ON DS(ON BSS110 -50 -50 ±20 -0.17 -0.68 0.63 -55 to 150 300 200 °C/W BSS84 Rev BSS110. Rev. A3 Units °C °C ...

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... BSS110 2.2 10 BSS84 0.05 0.27 BSS110 0.05 0.29 BSS84 37 45 BSS110 37 40 All 16 25 All 5 12 All 12 All 50 All 10 All 25 BSS84 -0.13 BSS110 -0.17 BSS84 -0.52 BSS110 -0.68 BSS84 -0.95 -1.2 BSS110 -1 -1.2 BSS84 Rev BSS110. Rev. A3 Units V µA µA µ ...

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... Drain Current and Temperature 1.1 1.05 1 0.95 0.9 0. -25 Figure 6. Gate Threshold Variation = -3V -3 -4.5 -5 -0.2 -0.4 -0.6 -0 DRA IN CURRENT ( -10V 125°C J 25°C -55°C -0.2 -0.4 -0.6 -0 DRAIN CURRENT ( - 100 125 T , JUNCTION TEM PERATURE (°C) J with Temperature BSS84 Rev BSS110. Rev 150 ...

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... DUT V IN 10% Figure 12. Switching Waveforms 25°C -55°C 0.6 0.8 1 1.2 1.4 1 BODY DIODE FORWARD VOLTAGE (V) SD Variation with Source Current and Temperature V = -10V DS -20V -40V GATE CHARGE (nC off t t d(off) r 90% 90% 10% 10% 90% 50% 50% INVERTED PULSE W IDTH BSS84 Rev BSS110. Rev ...

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... SINGLE PULSE V = -10V DS 0.01 0.005 -0 Figure 14. Maximum Safe Operating Area 0.01 0 TIME (sec typical case-to-ambient thermal resistance V = -10V 25° DRAIN -SOURCE VOLTAGE ( ( C/W JA P(pk Duty Cycle 100 o C/W BSS84 Rev BSS110. Rev (t) 2 300 ...

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TO-92 Package Dimensions TO-92; TO-18 Reverse Lead Form (J35Z Option) (FS PKG Code 92, 94, 96) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0. Note: ...

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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ GTO™ DenseTrench™ ...