BT169 Unisonic Technologies, BT169 Datasheet

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BT169

Manufacturer Part Number
BT169
Description
SCR
Manufacturer
Unisonic Technologies
Datasheet

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UTC BT169
DESCRIPTION
thyristors in a plastic envelope, intended for use in
general
applications.
interfaced directly to microcontrollers, logic integrated
circuits and other low power gate trigger circuits.
QUICK REFERENCE DATA
Repetitive peak off-state voltages
Average on-state current
RMS on-state current
Non-repetitive peak on-state current
ABSOLUTE MAXIMUM RATINGS
Repetitive peak off-state voltages :
Average on-state current
RMS on-state current
Non-repetitive peak on-state current
I
Repetitive rate of rise of on-state current
after triggering
Peak gate current
Peak gate voltage
Peak reverse gate voltage
UTC
2
t for fusing
The UTC BT169 is glass passivated, sensitive gate
purpose
PARAMETER
PARAMETER
These devices are intended to be
switching
UNISONIC TECHNOLOGIES CO., LTD.
and
phase
V
SYMBOL
DRM
I
T(RMS)
I
I
T(AV)
TSM
, V
control
V
SYMBOL
RRM
DRM
I
DI
V
T(RMS)
I
I
V
T(AV)
I
TSM
RGM
GM
I
T
GM
,V
2
/dt
t
RRM
MAX(B)
200
0.5
0.8
8
Tj=25 C prior to surge
All conduction angles
I
dI
TM
Half sine wave;
CONDITIONS
half sine wave;
Tlead<=83 C
G
MAX(D)
=2A;I
/dt=100mA/ s
t=8.3ms
400
0.5
0.8
t=10ms
t=10ms
8
1:CATHODE 2:GATE 3:ANODE
G
=10mA;
MAX(E)
1
500
0.5
0.8
8
MIN
MAX(G)
600
0.5
0.8
8
B:200
D:400
E:500
G:600
MAX
0.32
TO-92
0.5
0.8
50
8
9
1
5
5
SCR
UNIT
UNIT
A/ s
A
V
A
A
A
V
A
A
A
A
V
V
2
S
1

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BT169 Summary of contents

Page 1

... UTC BT169 DESCRIPTION The UTC BT169 is glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. ...

Page 2

... UTC BT169 PARAMETER Peak gate power Average gate power Storage temperature Operating junction temperature THERMAL RESISTANCES PARAMETER Thermal resistance junction to lead Thermal resistance junction to ambient ELECTRICAL CHARACTERISTICS PARAMETER STATIC Gate trigger current Latching current Holding current On-state voltage Gate trigger voltage ...

Page 3

... UTC BT169 Tc(max tot 0.8 a=1.57 conduction form 0.7 angle factor 1.9 degrees a 0 2.2 60 2.8 90 2.2 2.8 0.5 120 1.9 180 1.57 0.4 4 0.3 0.2 0 0.1 0.2 0.3 0.4 0.5 IF(AV FIG.1 Maximum on-state dissipation versus average tot on-state current where a=form factor=I T(AV) ITSM / A 1000 100 TSM 10 T time Tj initial=25 ¢X C max 100 s 1ms FIG ...

Page 4

... UTC BT169 IGT(Tj) VGT(25 ¢X C) 3.0 2.5 2.0 1.5 1.0 0 100 FIG.7 Normalised gate trigger current I (Tj)/I GT versus junction temperature Tj IL(Tj) IL(25 ¢X C) 3.0 2.5 2.0 1.5 1.0 0 100 (25 ¢X C),versus FIG.8 Normalised latching current I Tj)/ junction temperature Tj IH(Tj) IH(25 ¢X C) 3.0 2.5 2.0 1.5 1.0 0 100 (25 ¢X C),versus FIG ...

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