BUL1203 STMicroelectronics, BUL1203 Datasheet

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BUL1203

Manufacturer Part Number
BUL1203
Description
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Manufacturer
STMicroelectronics
Datasheet

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APPLICATIONS
DESCRIPTION
The BUL1203E is a new device manufactured
using Diffused Collector technology to enhance
switching speeds and tight h
maintaining a wide RBSOA.
Thanks to his structure it has an intrinsic
ruggedness which enables the transistor to
withstand a high collector current level during
Breakdown condition, without using the transil
protection usually necessary in typical converters
for lamp ballast.
ABSOLUTE MAXIMUM RATINGS
December 2003
Symbol
HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING (277 V HALF
BRIDGE AND 120 V PUSH-PULL
TOPOLOGIES)
V
V
V
V
T
P
I
I
CBO
CEO
CES
EBO
I
CM
T
I
BM
stg
C
B
tot
j
Collector-BaseVoltage (I
Collector-Emitter Voltage (V
Collector-Emitter Voltage (I
Emitter-Base Voltage (I
Collector Current
Collector Peak Current (t
Base Current
Base Peak Current (t
Total Dissipation at T
Storage Temperature
Max. Operating Junction Temperature
®
Parameter
p
c
< 5 ms)
FE
= 25
C
E
p
= 0)
= 0)
< 5 ms)
range while
B
BE
o
C
= 0)
HIGH VOLTAGE FAST-SWITCHING
= 0)
NPN POWER TRANSISTOR
INTERNAL SCHEMATIC DIAGRAM
-65 to 150
Value
1200
1200
550
100
150
TO-220
9
5
8
2
4
BUL1203E
1
2
3
Unit
o
o
W
V
V
V
V
A
A
A
A
C
C
1/7

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BUL1203 Summary of contents

Page 1

... ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING (277 V HALF BRIDGE AND 120 V PUSH-PULL TOPOLOGIES) DESCRIPTION The BUL1203E is a new device manufactured using Diffused Collector technology to enhance switching speeds and tight h maintaining a wide RBSOA. Thanks to his structure it has an intrinsic ruggedness which enables the transistor to ...

Page 2

... BUL1203E THERMAL DATA R Thermal Resistance Junction-case thj-case ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CES Current ( Collector Cut-off CEO Current ( Collector-Emitter CEO(sus) Sustaining Voltage ( Emitter-Base Voltage V EBO ( Collector-Emitter CE(sat) Saturation Voltage V Base-Emitter BE(sat) Saturation Voltage ...

Page 3

... DC Current Gain Collector-Emitter Saturation Voltage Inductive Load Storage Time DC Current Gain Base-Emitter Saturation Voltage Inductive Load Fall Time BUL1203E 3/7 ...

Page 4

... BUL1203E Reverse Biased Safe Operating Area Figure 1: Inductive Load Switching Test Circuit Figure 2: Resistive Load Switching Test Circuit 4/7 ...

Page 5

... Figure 3: Energy Rating Test Circuit BUL1203E 5/7 ...

Page 6

... BUL1203E DIM. MIN. A 4.40 C 1.23 D 2.40 E 0.49 F 0.61 F1 1.14 F2 1.14 G 4.95 G1 2.40 H2 10. 13.00 L5 2.65 L6 15.25 L7 6.20 L9 3.50 M DIA. 3.75 6/7 TO-220 MECHANICAL DATA mm TYP. MAX. 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 16.40 14.00 2.95 15.75 6.60 3.93 2.60 3.85 inch MIN. TYP. MAX. 0.173 0.181 0.048 0.052 0.094 0.107 0.019 0.027 0.024 0.034 0.044 0.067 0.044 0.067 0.194 0.202 0.094 0.106 0.394 0.409 ...

Page 7

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. The ST logo is a trademark of STMicroelectronics. All other names are the property of their respective owners. © 2003 STMicroelectronics – All Rights reserved STMicroelectronics GROUP OF COMPANIES http://www.st.com BUL1203E 7/7 ...

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