BZM55B VISHAY [Vishay Siliconix], BZM55B Datasheet

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BZM55B

Manufacturer Part Number
BZM55B
Description
Silicon Epitaxial Planar Z-Diodes
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet

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Silicon Epitaxial Planar Z–Diodes
Features
Applications
Voltage stabilization
Absolute Maximum Ratings
T
Maximum Thermal Resistance
T
Electrical Characteristics
T
Power dissipation
Z–current
Junction temperature
Storage temperature range
Junction ambient mounted on epoxy–glass hard tissue, Fig. 1
Junction tie point 35
Forward voltage
Document Number 85597
Rev. 3, 01-Apr-99
D
D
D
D
D
D
D
D
D
D
j
j
j
= 25
= 25
= 25
Saving space
Hermetic sealed parts
Fits onto SOD 323 / SOT 23 footprints
Electrical data identical with the devices
BZT55B... / TZMB...
Very sharp reverse characteristic
Low reverse current level
Very high stability
Low noise
Available with tighter tolerances
V
Parameter
Z
–tolerance
_
_
_
Parameter
C
C
C
Parameter
2%
m
m copper clad, 0.9 mm
I
F
=200mA
Test Conditions
R
thJA
Test Conditions
Test Conditions
x
300K/W
2
copper area per electrode
Type
Type
Symbol
www.vishay.de FaxBack +1-408-970-5600
V
F
Symbol
T
Vishay Telefunken
P
T
I
stg
Z
Min
V
j
Symbol
R
R
thJA
thJL
BZM55B...
–65...+175
Typ
P
Value
500
175
V
96 12315
Value
/V
500
300
Z
Max
1.5
K/W
K/W
Unit
mW
Unit
mA
° C
° C
Unit
1 (6)
V

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BZM55B Summary of contents

Page 1

... Test Conditions Forward voltage I =200mA F Document Number 85597 Rev. 3, 01-Apr-99 Test Conditions Type x R 300K/W thJA Test Conditions 2 copper area per electrode Type Symbol www.vishay.de FaxBack +1-408-970-5600 BZM55B... Vishay Telefunken 96 12315 Symbol Value Unit P 500 ° 175 j ° ...

Page 2

... BZM55B... Vishay Telefunken Type V I for Znom ZT BZM55B... V mA 2V4 2.4 5 2.35 to 2.45 2V7 2.7 5 2.64 to 2.76 3V0 3.0 5 2.94 to 3.06 3V3 3.3 5 3.24 to 3.36 3V6 3.6 5 3.52 to 3.68 3V9 3.9 5 3.82 to 3.98 4V3 4.3 5 4.22 to 4.38 4V7 4.7 5 4.60 to 4.80 5V1 5.1 5 5.00 to 5.20 5V6 5.6 5 5.48 to 5.72 6V2 6.2 5 6.08 to 6.32 6V8 6.8 5 6.66 to 6.94 7V5 7.5 5 7.35 to 7.65 8V2 8.2 5 8.04 to 8.36 9V1 9.1 5 8. 9.80 to 10.20 ...

Page 3

... Diode Capacitance vs. Z–Voltage 1.3 V Ztn 1.2 1.1 1.0 0.9 0.8 – 9599 Typical Change of Working Voltage vs. =25 ° C amb 100 10 1 0.1 0.01 0.001 9605 Forward Current vs. Forward Voltage BZM55B... Vishay Telefunken – Z-Voltage ( ( – –4 ...

Page 4

... BZM55B... Vishay Telefunken 100 80 P tot T amb – Z-Voltage ( 9604 Z Z–Current vs. Z–Voltage 50 P =500mW tot 40 T =25 C amb – Z-Voltage ( 9607 Z Z–Current vs. Z–Voltage 1000 t /T=0.5 p 100 t /T=0 /T=0 ...

Page 5

... Board for R definition (in mm) thJA Reflow Soldering 1.2 0.6 1.2 0.6 2.4 Recommended foot pads (in mm) Dimensions in mm Document Number 85597 Rev. 3, 01-Apr-99 Wave Soldering 1.27 1.4 9.9 0.7 Recommended foot pads (in mm) 96 12072 www.vishay.de FaxBack +1-408-970-5600 BZM55B... Vishay Telefunken 1.4 0.7 2.8 5 (6) ...

Page 6

... BZM55B... Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment ...

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