cat22c10 Catalyst Semiconductor, cat22c10 Datasheet

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cat22c10

Manufacturer Part Number
cat22c10
Description
256-bit Nonvolatile Cmos Static Ram
Manufacturer
Catalyst Semiconductor
Datasheet

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© Catalyst Semiconductor, Inc., Patent Pending
Characteristics subject to change without notice
CAT22C10
256-Bit Nonvolatile CMOS Static RAM
FEATURES
DESCRIPTION
The CAT22C10 NVRAM is a 256-bit nonvolatile memory
organized as 64 words x 4 bits. The high speed Static
RAM array is bit for bit backed up by a nonvolatile
EEPROM array which allows for easy transfer of data
from RAM array to EEPROM (STORE) and from
EEPROM to RAM (RECALL). STORE operations are
completed in 10ms max. and RECALL operations typi-
cally within 1.5 s. The CAT22C10 features unlimited
RAM write operations either through external RAM
PIN CONFIGURATION
V ss
NC
CS
A 4
A 3
A 2
A 1
A 0
Single 5V Supply
Fast RAM Access Times:
–200ns
–300ns
Infinite EEPROM to RAM Recall
CMOS and TTL Compatible I/O
Power Up/Down Protection
100,000 Program/Erase Cycles (E
DIP Package (P, L)
2
1
3
6
9
4
5
7
8
1 4
1 8
1 7
1 6
1 5
13
12
10
11
V cc
NC
A 5
I/O 3
I/O 2
I/O 1
I/O 0
WE
RECALL
STORE
V ss
CS
SOIC Package (J, W)
A 4
A 3
A 2
A 1
A 0
1
2
3
5
6
4
7
8
2
PROM)
1 6
1 5
1 4
13
12
10
11
9
V cc
I/O 4
I/O 3
I/O 2
I/O 1
A 5
WE
RECALL
1
PIN FUNCTIONS
writes or internal recalls from EEPROM. Internal false
store protection circuitry prohibits STORE operations
when V
The CAT22C10 is manufactured using Catalyst’s ad-
vanced CMOS floating gate technology. It is designed
to endure 100,000 program/erase cycles (EEPROM)
and has a data retention of 10 years. The device is
available in JEDEC approved 18-pin plastic DIP and 16-
pin SOIC packages.
Low CMOS Power Consumption:
–Active: 40mA Max.
–Standby: 30 A Max.
JEDEC Standard Pinouts:
–18-pin DIP
–16-pin SOIC
10 Year Data Retention
Commercial, Industrial and Automotive
Temperature Ranges
"Green" Package Options Available
Pin Name
A
I/O
WE
CS
RECALL
STORE
V
V
NC
0
CC
SS
CC
–A
0
–I/O
5
is less than 3.0V.
3
Address
Data In/Out
Write Enable
Chip Select
Recall
Store
+5V
Ground
No Connect
Function
Doc. No. 1082, Rev. O
TM

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cat22c10 Summary of contents

Page 1

... EEPROM array which allows for easy transfer of data from RAM array to EEPROM (STORE) and from EEPROM to RAM (RECALL). STORE operations are completed in 10ms max. and RECALL operations typi- cally within 1.5 s. The CAT22C10 features unlimited RAM write operations either through external RAM PIN CONFIGURATION DIP Package (P, L) ...

Page 2

... CAT22C10 BLOCK DIAGRAM STORE RECALL (1)(2)(3) MODE SELECTION Mode Standby H RAM Read L RAM Write L (EEPROM RAM) X (EEPROM RAM) H (RAM EEPROM) X (RAM EEPROM) H (4) POWER-UP TIMING Symbol Parameter VCCSR V Slew Rate CC Note: (1) RECALL signal has priority over STORE signal when both are applied at the same time. ...

Page 3

... 0.8 2.4 0.4 1.5 5 Max +2.0V for periods of less than 20 ns CAT22C10 Reference Test Method MIL-STD-883, Test Method 1033 MIL-STD-883, Test Method 1008 MIL-STD-883, Test Method 3015 JEDEC Standard 17 Unit Conditions mA All Inputs = 5. All I/O’s Open All I/O’s Open ...

Page 4

... CAT22C10 A.C. CHARACTERISTICS, Write Cycle V = +5V 10%, unless otherwise specified. CC Symbol Parameter t Write Cycle Time Write Pulse Width CW t Address Setup Time AS t Write Pulse Width WP t Write Recovery Time WR t Data Valid Time DW t Data Hold Time DH (1) t Output Disable Time ...

Page 5

... This parameter is tested initially and after a design or process change that affects the parameter. Limits Min. Max. Units 10 ms 200 ns 100 Limits Min. Max. Units 1.4 s 300 ns 100 1 CAT22C10 Conditions C = 100pF + 1TTL gate 2.2V 0.65V 2.2V 0.65V IH IL Conditions C = 100pF + 1TTL gate 2.2V 0.65V 2.2V 0.65V IH IL Doc ...

Page 6

... Standby Mode The chip select (CS) input controls all of the functions of the CAT22C10. When a high level is supplied to the CS pin, the device goes into the standby mode where the outputs are put into a high impendance state and the power consumption is drastically reduced. With I than 100 A in standby mode, the designer has the flexibility to use this part in battery operated systems ...

Page 7

... CS low and supplying input data DATA VALID DATA VALID HIGH-Z 7 CAT22C10 ) are met, the data HIGH Doc. No. 1082, Rev. O ...

Page 8

... EEPROM array has a minimum data retention time of 10 years. DATA PROTECTION DURING POWER-UP AND POWER-DOWN The CAT22C10 has on-chip circuitry which will prevent a store operation from occurring when V 3.0V typ. This function eliminates the potential hazard of spurious signals initiating a store operation when the system power is below 3 ...

Page 9

... The device used in the above example is a 22C10JI-20TE13 (SOIC, Industrial Temperature, 200ns Access Time, Tape & Reel) Suffix J I Temperature Range Blank = Commercial (0˚ - 70˚ Industrial (-40˚ - 85˚ Automotive (-40˚ - 105˚C)* Package P: PDIP J: SOIC (JEDEC) L: PDIP (Lead free, Halogen free) W: SOIC (Lead free, Halogen free) 9 CAT22C10 -20 -TE13 Tape & Reel Speed 20: 200ns 30: 300ns Doc. No. 1082, Rev. O ...

Page 10

... Catalyst Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Catalyst Semiconductor product could create a situation where personal injury or death may occur. ...

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