CEF02N6 Chino-Excel Technology Co., Ltd., CEF02N6 Datasheet

no-image

CEF02N6

Manufacturer Part Number
CEF02N6
Description
Manufacturer
Chino-Excel Technology Co., Ltd.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CEF02N6
Manufacturer:
CET
Quantity:
865
Part Number:
CEF02N6A
Manufacturer:
SANYO
Quantity:
1 040
Part Number:
CEF02N6AZ
Manufacturer:
CET
Quantity:
4 000
FEATURES
ABSOLUTE MAXIMUM RATINGS
2002.September
N-Channel Enhancement Mode Field Effect Transistor
Lead free product is acquired.
Super high dense cell design for extremely low R
TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
Maximum Power Dissipation @ T
Single Pulsed Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Operating and Store Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
High power and current handing capability.
CEB SERIES
TO-263(DD-PAK)
CEP02N6
CEB02N6
CEI02N6
CEF02N6
Type
600V
600V
600V
600V
V
DSS
Parameter
Parameter
CEI SERIES
TO-262(I2-PAK)
a
- Derate above 25 C
R
DS(ON)
5
5
5
5
a
a
d
C
= 25 C
2A
2A
2A
2A
I
CEP SERIES
TO-220
D
e
@V
DS(ON)
10V
10V
10V
10V
T c = 25 C unless otherwise noted
GS
CEP02N6/CEB02N6
.
4 - 2
CEI02N6/CEF02N6
Symbol
Symbol
T
R
CEF SERIES
TO-220F
I
R
V
V
E
E
J
I
DM
P
I
,T
AR
DS
GS
AR
D
AS
D
JC
JA
stg
f
TO-220/263/262
G
0.48
62.5
125
5.4
2.1
60
2
6
2
-55 to 150
Limit
Limit
600
30
TO-220F
http://www.cetsemi.com
0.23
125
5.4
4.3
29
65
D
2
6
2
S
e
e
Units
Units
W/ C
C/W
C/W
mJ
mJ
W
V
V
A
A
A
C

Related parts for CEF02N6

CEF02N6 Summary of contents

Page 1

... Maximum Power Dissipation @ T - Derate above 25 C Single Pulsed Avalanche Energy a Repetitive Avalanche Current a Repetitive Avalanche Energy Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 2002.September CEP02N6/CEB02N6 CEI02N6/CEF02N6 10V 2A 10V 2A 10V e 2A 10V ...

Page 2

... Starting e.Limited only by maximum temperature allowed . f .Pulse width limited by safe operating area . g.Full package I = 1.5A . S(max) h.Full package V test condition CEP02N6/CEB02N6 CEI02N6/CEF02N6 unless otherwise noted Symbol Test Condition 0V 250 µ A DSS 600V, V DSS ...

Page 3

... Drain-to-Source Voltage (V) DS Figure 3. Capacitance 1 =250µA 1.2 D 1.1 1.0 0.9 0.8 0.7 0.6 -50 - 100 T , Junction Temperature Figure 5. Gate Threshold Variation with Temperature CEP02N6/CEB02N6 CEI02N6/CEF02N6 2.2 1.9 1.6 1.3 1.0 0.7 0.4 25 -100 125 150 Figure 6. Body Diode Forward Voltage =150 C J -55 C 1.V =40V ...

Page 4

... GS R GEN G S Figure 9. Switching Test Circuit 0 10 D=0.5 0.2 0 0.05 0.02 0.01 Single Pulse - Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve CEP02N6/CEB02N6 CEI02N6/CEF02N6 DS(ON = =150 C J Single Pulse - ...

Related keywords