CPV363 International Rectifier, CPV363 Datasheet

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CPV363

Manufacturer Part Number
CPV363
Description
IGBT SIP MODULE Fast IGBT
Manufacturer
International Rectifier
Datasheet

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Previous Datasheet
IGBT SIP MODULE
The IGBT technology is the key to International Rectifier's advanced line of
IMS (Insulated Metal Substrate) Power Modules. These modules are more
efficient than comparable bipolar transistor modules, while at the same time
having the simpler gate-drive requirements of the familiar power MOSFET.
This superior technology has now been coupled to a state of the art materials
system that maximizes power throughput with low thermal resistance. This
package is highly suited to motor drive applications and where space is at a
premium.
Thermal Resistance
Features
• Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
• HEXFRED
• Optimized for medium operating frequency (1 to
Product Summary
Output Current in a Typical 5.0 kHz Motor Drive
Absolute Maximum Ratings
Description
V
I
I
I
I
I
I
V
V
P
P
T
T
R
R
R
Wt
C
C
CM
LM
F
FM
10kHz) See Fig. 1 for Current vs. Frequency curve
J
CES
GE
ISOL
D
D
STG
@ T
@ T
@ T
JC
JC
CS
@ T
@ T
7.65 A
Power Factor 0.8, Modulation Depth 80% (See Figure 1)
(IGBT)
(DIODE)
(MODULE)
C
C
C
C
C
= 100°C
= 25°C
= 100°C
= 25°C
= 100°C
RMS
TM
soft ultrafast diodes
per phase (2.4 kW total) with T
Collector-to-Emitter Voltage
Continuous Collector Current, each IGBT
Continuous Collector Current, each IGBT
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Isolation Voltage, any terminal to case, 1 min.
Maximum Power Dissipation, each IGBT
Maximum Power Dissipation, each IGBT
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Junction-to-Case, each IGBT, one IGBT in conduction
Junction-to-Case, each diode, one diode in conduction
Case-to-Sink, flat, greased surface
Weight of module
Parameter
Parameter
C
= 90°C, T
To Order
Index
C-149
J
= 125°C, Supply Voltage 360Vdc,
3
6
300 (0.063 in. (1.6mm) from case)
Q1
Q2
5-7 lbf•in (0.55-0.8 N•m)
7
D1
D2
-40 to +150
12
CPV363MF
9
Max.
4
20 (0.7)
2500
600
±20
8.7
6.1
Typ.
16
50
50
50
36
14
Q3
Q4
0.1
Next Data Sheet
13
1
D3
D4
15
18
PD - 5.023B
10
Max.
Q5
Q6
3.5
5.5
Fast IGBT
19
IMS-2
Revision 1
D5
D6
Units
Units
g (oz)
V
°C/W
°C
RMS
W
V
A
V
16

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CPV363 Summary of contents

Page 1

... R (IGBT) Junction-to-Case, each IGBT, one IGBT in conduction JC R (DIODE) Junction-to-Case, each diode, one diode in conduction JC R (MODULE) Case-to-Sink, flat, greased surface CS Wt Weight of module Index Next Data Sheet CPV363MF 90° 125°C, Supply Voltage 360Vdc, ...

Page 2

... Previous Datasheet CPV363MF Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Temp. Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th Temp. Coeff. of Threshold Voltage GE(th Forward Transconductance fe I Zero Gate Voltage Collector Current CES V Diode Forward Voltage Drop ...

Page 3

... F re quenc y ( 0° ° 0 ate-to-E m itter V olta Fig Typical Transfer Characteristics C-151 To Order Next Data Sheet CPV363MF 3.7 2.8 S 1.9 0.9 0 100 µ ...

Page 4

... Previous Datasheet CPV363MF 100 ase Tem perature (° Fig Maximum Collector Current vs. Case Temperature 0 .05 0.0 2 0.1 0 ING ( MAL 0.01 0.00001 0.0001 Fig Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case Index 3 ...

Page 5

... Fig Typical Gate Charge vs. Gate-to-Emitter Voltage 10 1 -60 -40 - (° Fig Typical Switching Losses vs. Case Temperature C-153 To Order Next Data Sheet CPV363MF 8. ...

Page 6

... Previous Datasheet CPV363MF 50° lle itte rre Fig Typical Switching Losses vs. Collector-to-Emitter Current 100 10 1 Fig Maximum Forward Voltage Drop vs. Instantaneous Forward Current ...

Page 7

... Fig Typical Recovery Current vs. di /dt f 10000 V = 200V 125° 25°C J 1000 F 100 10 1000 100 /dt Fig Typical di f C-155 To Order Next Data Sheet CPV363MF I = 24A 12A F 1000 di /dt - (A/µ 12A 24A F 1000 di /dt - (A/µs) f /dt vs. di /dt f ...

Page 8

... Previous Datasheet CPV363MF Same type device as D.U.T. 430µF 80% of Vce D.U.T. Fig. 18a - Test Circuit for Measurement off(diode d(on) GATE VOLTAGE D.U.T. 10% +Vg +Vg Vce 10% Ic Vcc 90 Vce tr td(on) t1 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining E ...

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