cy62157ev30 Cypress Semiconductor Corporation., cy62157ev30 Datasheet
cy62157ev30
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cy62157ev30 Summary of contents
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... Pb-free 44-pin TSOP II and 48-pin TSOP I packages [1] Functional Description The CY62157EV30 is a high performance CMOS static RAM organized as 512K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL portable applications such as cellular telephones ...
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... DNU CE2 12 DNU 13 BHE 14 BLE 15 A18 16 A17 ® CY62157EV30 MoBL Power Dissipation , (mA) CC Standby, I SB2 (µ max [2] [2] Max Typ Max Typ Max A16 47 BYTE 46 Vss 45 IO15/A19 44 IO7 43 IO14 ...
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... ® CY62157EV30 MoBL Page [+] Feedback ...
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... Document #: 38-05445 Rev Input Voltage Output Current into Outputs (LOW) ............................ 20 mA Static Discharge Voltage .......................................... > 2001V (MIL-STD-883, Method 3015) Latch up Current .................................................... > 200 mA Operating Range + 0.3V) Device CCmax CY62157EV30LL Ind’l/Auto-A –40°C to +85°C + 0.3V) CCmax Test Conditions I = –0 –1.0 mA, V > 2.70V ...
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... V < 0. Figure 2. Data Retention Waveform DATA RETENTION MODE V V > 1.5V CC(min CDR > 100 µs or stable at V > 100 µ CC(min) CC(min) ® CY62157EV30 MoBL TSOP I TSOP II Unit °C/W 74.88 76.88 °C/W 8.6 13.52 90% 10% Fall Time = 1 V/ 3.0V Unit Ω 1103 Ω ...
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... Test Loads and Waveforms” on page less than less than less than t LZCE HZBE LZBE HZOE , BHE, BLE or both = V IL ® CY62157EV30 MoBL 45 ns (Ind’l/Auto-A) Unit Min Max ...
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... Figure 3. Read Cycle No OHA Figure 4. Read Cycle No DBE t DOE DATA VALID 50% , BHE, BLE, or both = V , and transition HIGH. 2 ® CY62157EV30 MoBL DATA VALID HZCE t HZBE t HZOE HIGH IMPEDANCE Page [+] Feedback ...
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... Figure 5. Write Cycle No SCE PWE VALID DATA [18, 22, 23] Figure 6. Write Cycle No SCE PWE VALID DATA , the output remains in a high impedance state. IH ® CY62157EV30 MoBL Page [+] Feedback ...
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... DATA IO Document #: 38-05445 Rev. *E [23] Figure 7. Write Cycle No SCE PWE t SD VALID DATA HZWE [23] Figure 8. Write Cycle No SCE PWE t SD VALID DATA ® CY62157EV30 MoBL LZWE Page [+] Feedback ...
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... Thin Small Outline Package Type II (Pb-free) 51-85183 48-pin Thin Small Outline Package Type I (Pb-free) 51-85150 48-ball Very Fine Pitch Ball Grid Array (Pb-free) 51-85087 44-pin Thin Small Outline Package Type II (Pb-free) ® CY62157EV30 MoBL Mode Power Standby ( Standby ( ...
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... Figure 9. 48-Pin VFBGA ( mm), 51-85150 TOP VIEW A1 CORNER 6.00±0.10 SEATING PLANE C Document #: 38-05445 Rev. *E CY62157EV30 MoBL BOTTOM VIEW A1 CORNER Ø0. Ø0. Ø0.30±0.05(48X 1.875 A 0.75 3 ...
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... Package Diagrams (continued) Document #: 38-05445 Rev. *E Figure 10. 44-Pin TSOP II, 51-85087 ® CY62157EV30 MoBL 51-85087-*A Page [+] Feedback ...
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... Cypress against all charges. N 0.472[12.00] 0.724 [18.40] 0.047[1.20] MAX. 0.787[20.00] 0.010[0.25] GAUGE PLANE 0.020[0.50] 0.028[0.70] ® CY62157EV30 MoBL 0.037[0.95] 0.041[1.05] 0.020[0.50] TYP. 0.007[0.17] 0.011[0.27] 0.002[0.05] 0.006[0.15] 51-85183-*A Page [+] Feedback ...
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... Document History Page Document Title: CY62157EV30 MoBL Document Number: 38-05445 Orig. of REV. ECN NO. Issue Date Change ** 202940 See ECN *A 291272 See ECN *B 444306 See ECN *C 467052 See ECN *D 925501 See ECN *E 1045801 See ECN Document #: 38-05445 Rev. *E ® , 8-Mbit (512K x 16) Static RAM ...