DS1220 Dallas, DS1220 Datasheet

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DS1220

Manufacturer Part Number
DS1220
Description
16k Nonvolatile SRAM
Manufacturer
Dallas
Datasheet

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FEATURES
DESCRIPTION
The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs
organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and
control circuitry which constantly monitors V
occurs, the lithium energy source is automatically switched on and write protection is unconditionally
enabled to prevent data corruption. The NV SRAMs can be used in place of existing 2k x 8 SRAMs
directly conforming to the popular bytewide 24-pin DIP standard. The devices also match the pinout of
the 2716 EPROM and the 2816 EEPROM, allowing direct substitution while enhancing performance.
There is no limit on the number of write cycles that can be executed and no additional support circuitry is
required for microprocessor interfacing.
www.dalsemi.com
10 years minimum data retention in the
absence of external power
Data is automatically protected during power
loss
Directly replaces 2k x 8 volatile static RAM
or EEPROM
Unlimited write cycles
Low-power CMOS
JEDEC standard 24-pin DIP package
Read and write access times as fast as 100 ns
Lithium energy source is electrically
disconnected to retain freshness until power
is applied for the first time
Full ±10% V
Optional ±5% V
(DS1220AB)
Optional industrial temperature range of
-40°C to +85°C, designated IND
CC
operating range (DS1220AD)
CC
operating range
CC
for an out-of-tolerance condition. When such a condition
1 of 9
PIN ASSIGNMENT
PIN DESCRIPTION
A0-A10
DQ0-DQ7
V
GND
CE
WE
OE
CC
24-Pin ENCAPSULATED PACKAGE
16k Nonvolatile SRAM
GND
DQ0
DQ1
DQ2
A7
A6
A5
A4
A3
A2
A1
A0
720-mil EXTENDED
1
2
3
4
5
6
7
8
9
10
11
12
- Address Inputs
- Data In/Data Out
- Chip Enable
- Write Enable
- Output Enable
- Power (+5V)
- Ground
DS1220AB/AD
24
23
22
21
20
19
18
17
16
15
14
13
VCC
WE
A8
A9
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
111899

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DS1220 Summary of contents

Page 1

... Optional industrial temperature range of -40°C to +85°C, designated IND DESCRIPTION The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors V occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption ...

Page 2

... OE WRITE MODE The DS1220AB and DS1220AD execute a write cycle whenever the WE and CE signals are active (low) after address inputs are stable. The latter occurring falling edge will determine the start of the write cycle. The write cycle is terminated by the earlier rising edge All address inputs must be kept valid throughout the write cycle ...

Page 3

... I 75 CC01 I 85 CCO1 4.5 V 4.62 4.75 TP 4.25 V 4.37 4.5 TP SYMBOL MIN TYP MAX UNITS I DS1220AB/ See Note 10) A NOTES for DS1220AB See Note 10) A 10% for DS1220AD) NOTES =25°C) A NOTES pF pF ...

Page 4

... WR1 t 10 WR2 35 t ODW 5 t OEW DH1 t 10 DH2 DS1220AB/AD (V =5.0V 5% for DS1220AB See Note 10 =5.0V 10% for DS1220AD) CC DS1220AB-120 DS1220AD-120 UNITS MIN MAX 120 ns 120 120 120 ...

Page 5

... WC t 100 WR1 t 10 WR2 35 t ODW 5 t OEW DH1 t 10 DH2 DS1220AB/AD DS1220AB-200 DS1220AD-200 UNITS NOTES MIN MAX 200 ns 200 ns 100 ns 200 200 ns 150 ...

Page 6

... READ CYCLE SEE NOTE 1 WRITE CYCLE 1 SEE NOTES AND 12 WRITE CYCLE 2 SEE NOTES AND DS1220AB/AD ...

Page 7

... REC SYMBOL MIN TYP MAX UNITS t DR during write cycle, the output buffers remain in a high-impedance state See Note 10 300 s 300 s 2 125 years is measured from the latter DS1220AB/AD NOTES 11 =25°C) A NOTES 9 ...

Page 8

... low or the WE low transition occurs prior to or simultaneously with the CE low transition, the output buffers remain in a high-impedance state during this period. 9. Each DS1220AB and each DS1220AD has a built-in switch that disconnects the lithium source until V is first applied by the user. The expected t ...

Page 9

... DS1220AB/AD NONVOLATILE SRAM, 24-PIN 720-MIL EXTENDED MODULE PKG 24-PIN DIM MIN A IN. 1.320 MM 33.53 B IN. 0.695 MM 17.65 C IN. 0.390 MM 9.91 D IN. 0.100 MM 2.54 E IN. 0.017 MM 0.43 F IN. 0.120 MM 3.05 G IN. 0.090 MM 2. 0.590 MM 14.99 J IN. 0.008 MM 0.20 K IN. 0.015 MM 0. DS1220AB/AD MAX 1.340 34.04 0.720 18.29 0.415 10.54 0.130 3.30 0.030 0.76 0.160 4 ...

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