DTV1500 STMicroelectronics, DTV1500 Datasheet

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DTV1500

Manufacturer Part Number
DTV1500
Description
CRT HORIZONTAL DEFLECTION HIGH VOLTAGE DAMPER DIODE
Manufacturer
STMicroelectronics
Datasheet

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MAIN PRODUCTS CHARACTERISTICS
DESCRIPTION
High voltage diode especially designed for
horizontal deflection stage in standard and high
resolution displays for TV’s and monitors.
This device
ISOWATT220AC and TO-220FPAC (insulated
package).
ABSOLUTE MAXIMUM RATINGS
January 2002 - Ed: 4C
FEATURES AND BENEFITS
High breakdown voltage capability
High frequency operation
Specified turn on switching characteristics
Very fast recovery diode
Low static and peak forward voltage drop for low
dissipation
Insulated package (ISOWATT220AC & TO-220FPAC):
Insulating voltage = 2000V DC
Capacitance = 12pF
Planar technology allowing high quality and best
electrical characteristics
Symbol
I
V
F(RMS)
I
T
FSM
RRM
T
stg
V
trr (max)
j
F
V
I
®
F(AV)
(max)
RRM
is packaged
Repetitive peak reverse voltage
RMS forward current
Surge non repetitive forward current
Storage temperature
Maximum operating junction temperature
in TO-220AC,
1500 V
125 ns
1.7 V
6 A
Parameter
(CRT HORIZONTAL DEFLECTION)
HIGH VOLTAGE DAMPER DIODE
DTV1500HFP
TO-220FPAC
DTV1500HD
TO-220AC
tp = 10ms
sinusoidal
K
K
K
A
DTV1500Hxx
A
- 65 to 150
ISOWATT220AC
Value
1500
150
A
15
80
DTV1500HF
K
Unit
°C
°C
V
A
A
A
1/8

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DTV1500 Summary of contents

Page 1

... Maximum operating junction temperature j January 2002 - Ed: 4C (CRT HORIZONTAL DEFLECTION) HIGH VOLTAGE DAMPER DIODE 6 A 1500 V 1.7 V 125 ns TO-220FPAC DTV1500HFP TO-220AC DTV1500HD in TO-220AC, Parameter DTV1500Hxx ISOWATT220AC DTV1500HF A K Value 1500 10ms 80 sinusoidal - 65 to 150 150 A K Unit °C °C 1/8 ...

Page 2

... DTV1500Hxx THERMAL RESISTANCE Symbol R Junction to Case thermal resistance th(j-c) STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter I Reverse leakage current Forward voltage drop F ** pulse test : * < 380 s, < 2% RECOVERY CHARACTERISTICS Symbol Parameter t Reverse rr recovery time t Reverse rr recovery time TURN-ON SWITCHING CHARACTERISTICS Symbol ...

Page 3

... IF(av)( =tp/T 0 100 125 150 0 Fig. 4-1: Non repetitive surge peak forward current versus overload duration (TO-220FPAC) IM( Maximum Tj=25° 1E-3 DTV1500Hxx T Tcase(° 100 T Tcase(° 100 t(s) t =0.5 1E-2 1E-1 125 150 125 150 Tc=100°C 1E+0 3/8 ...

Page 4

... DTV1500Hxx Fig. 4-2: Non repetitive surge peak forward current versus overload duration (ISOWATT220AC) IM( t(s) =0.5 0 1E-3 1E-2 Fig. 5: Reverse recovery charges versus dIF/dt Qrr(nc) 1200 IF= 6A 90% confidence 1000 Tj=125°C 800 600 400 200 dIF/dt(A/µs) 0 0.1 0.2 0.5 1.0 Fig. 7: Transient peak forward voltage versus ...

Page 5

... K=[Zth(j-c)/Rth(j-c)] 1.0 = 0.5 0.5 = 0.2 = 0.1 0.2 Single pulse t(s) 0.1 1E-2 1E-1 Fig. 10: Junction capacitance versus reverse volt- age applied (typical values) C(pF) 100 100 120 140 1 Fig. 11-2: Relative variation of thermal impedance pulse duration junction to case versus pulse duration ( TO-220AC) K=[Zth(j-c)/Rth(j-c)] 1.0 = 0.5 0.5 = 0.2 = 0.1 0.2 T Single pulse tp =tp/T 0.1 1E+0 1E+1 1E-3 DTV1500Hxx Tj=25°C F=1MHz VR(V) 10 100 T tp(s) =tp/T tp 1E-2 1E-1 1E+0 200 5/8 ...

Page 6

... DTV1500Hxx PACKAGE DATA TO-220FPAC 6/8 REF Dia Dia. DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.4 4.6 0.173 0.181 2.5 2.7 0.098 0.106 2.5 2.75 0.098 0.108 0.45 0.70 0.018 0.027 0.75 1 0.030 0.039 1.15 1.70 0.045 0.067 4.95 5.20 0.195 ...

Page 7

... Min 2. 0.61 F1 1.14 G 4.95 H2 10. 13. 15.25 L7 6.20 L9 3.50 M Diam. I 3.75 DTV1500Hxx DIMENSIONS Millimeters Inches Max. Min. Max. 4.60 0.173 0.181 2.70 0.098 0.106 2.75 0.094 0.108 0.70 0.016 0.028 1.00 0.030 0.039 1.70 0.045 0.067 5.20 0.195 0.205 10.40 0.394 0.409 16.00 Typ. 0.630 Typ. 30.60 1.125 1.205 16.40 0.626 ...

Page 8

... Type Marking DTV1500HFP DTV1500HFP DTV1500HF DTV1500HF DTV1500HD DTV1500HD Cooling method: C Epoxy meets UL94-V0 Torquevalue: 0.55 m.Ntyp (0.7m.Nmax) Electrical Isolation: 2000V DC Capacitance: 12pF Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics ...

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