FCP11N60 Fairchild Semiconductor, FCP11N60 Datasheet

MOSFET N-CH 600V 11A TO-220

FCP11N60

Manufacturer Part Number
FCP11N60
Description
MOSFET N-CH 600V 11A TO-220
Manufacturer
Fairchild Semiconductor
Series
SuperFET™r
Datasheet

Specifications of FCP11N60

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
380 mOhm @ 5.5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
52nC @ 10V
Input Capacitance (ciss) @ Vds
1490pF @ 25V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.38 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
9.7 S
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
11 A
Power Dissipation
125000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FCP11N60_NL
FCP11N60_NL

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©2008 Fairchild Semiconductor Corpor
FCP11N60/FCPF11N60
General Description
SuperFET
from Fairchild with outstanding low on-resistance and low
gate charge performance, a result of proprietary technology
utilizing advanced charge balance mechanisms.
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance,
and withstand extreme dv/dt rate and higher avalanche
energy. Consequently, SuperFET is very suitable for
various AC/DC power conversion in switching mode
operation for system miniaturization and higher efficiency.
Absolute Maximum Ratings
* Drain current limited by maximum junction termperature
Thermal Characteristics
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
GSS
AS
AR
D
, T
Symbol
JC
CS
JA
Symbol
STG
G
TM
D
is a new generation of high voltage MOSFETs
S
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
TO-220
FCP Series
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
C
= 25°C)
Parameter
Parameter
T
C
= 25°C unless otherwise noted
C
C
G
= 25°C)
= 100°C)
D
S
Features
• 650V @T
• Typ. Rds(on)=0.32
• Ultra low gate charge (typ. Qg=40nC)
• Low effective output capacitance (typ. Coss.eff=95pF)
• 100% avalanche tested
• RoHS Compliant
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TO-220F
FCPF Series
j
= 150 C
FCP11N60
FCP11N60
62.5
125
1.0
1.0
0.5
33
11
7
-55 to +150
12.5
SuperFET
340
300
4.5
11
30
FCPF11N60
FCPF11N60
G
! ! ! !
! ! ! !
0.29
62.5
11*
33*
3.5
December 2008
36
7*
--
◀ ◀ ◀ ◀
◀ ◀ ◀ ◀
! ! ! !
! ! ! !
! ! ! !
! ! ! !
D
S
● ●
● ●
● ●
● ●
● ●
● ●
▲ ▲ ▲ ▲
▲ ▲ ▲ ▲
Rev. B1, December 2008
Units
Units
°C/W
°C/W
°C/W
W/°C
V/ns
mJ
mJ
°C
°C
W
A
A
A
V
A
TM

Related parts for FCP11N60

FCP11N60 Summary of contents

Page 1

... S FCP11N60 FCPF11N60 Units 340 12.5 mJ 4.5 V/ns 125 36 W 1.0 0.29 W/°C -55 to +150 °C 300 °C FCP11N60 FCPF11N60 Units 1.0 3.5 °C/W 0.5 -- °C/W 62.5 62.5 °C/W Rev. B1, December 2008 TM ...

Page 2

... Repetitive Rating : Pulse width limited by maximum junction temperature 5.5A 50V Starting 11A, di/dt 200A Starting DSS, 4. Pulse Test : Pulse width 300 s, Duty cycle 5. Essentially independent of operating temperature ©2008 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions 250 250 250 A, Referenced to 25° ...

Page 3

... I , Drain Current [A] D Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 6000 5000 4000 C oss 3000 C 2000 iss C 1000 rss Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2008 Fairchild Semiconductor Corporation Notes : 1. 250 s Pulse Test 10V 20V Note : ...

Page 4

... Notes : - 150 Single Pulse - Drain-Source Voltage [V] DS Figure 9-1. Maximum Safe Operating Area for FCP11N60 12.5 10.0 7.5 5.0 2.5 0 Case Temperature [ C Figure 10. Maximum Drain Current vs. Case Temperature ©2008 Fairchild Semiconductor Corporation (Continued) 3.0 2.5 2.0 1.5 1.0 * Notes : 250 A 0 ...

Page 5

... Typical Characteristics Figure 11-1. Transient Thermal Response Curve for FCP11N60 Figure 11-2. Transient Thermal Response Curve for FCPF11N60 ©2008 Fairchild Semiconductor Corporation (Continued tio tio Rev. B1, December 2008 ...

Page 6

... Resistive Switching Test Circuit & Waveforms 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2008 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT 10% 10 DUT DUT ...

Page 7

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2008 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

Page 8

... Package Dimensions 9.90 0.20 (8.70) ø3.60 0.10 1.27 0.10 2.54TYP [2.54 ] 0.20 10.00 ©2008 Fairchild Semiconductor Corporation TO-220 1.52 0.10 0.80 0.10 2.54TYP [2.54 ] 0.20 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 0.20 –0.05 Dimensions in Millimeters Rev. B1, December 2008 ...

Page 9

... Package Dimensions 10.16 (7.00) MAX1.47 0.80 0.10 #1 0.35 0.10 2.54TYP [2.54 ] 0.20 9.40 ©2008 Fairchild Semiconductor Corporation TO-220F ø3.18 0.20 0.10 (1.00x45 ) 0.50 2.54TYP [2.54 ] 0.20 0.20 2.54 0.20 (0.70) +0.10 2.76 –0.05 0.20 Dimensions in Millimeters Rev. B1, December 2008 ...

Page 10

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ ...

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