FDB2532 Fairchild Semiconductor, FDB2532 Datasheet
FDB2532
Specifications of FDB2532
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FDB2532 Summary of contents
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... FDB SERIES T = 25°C unless otherwise noted C Parameter 10V 10V 10V C/ copper pad area certification. August 2002 D SOURCE DRAIN GATE G TO-262AB FDI SERIES S Ratings Units 150 Figure 4 A 400 mJ 310 -55 to 175 C o 0. C/W FDB2532 / FDP2532 / FDI2532 Rev. B ...
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... 33A, dI /dt= 100A 33A, dI /dt= 100A Tape Width Quantity 24mm 800 units N/A 50 units N/A 50 units Min Typ Max Units 150 - - 250 - - 100 0.014 0.016 - 0.016 0.024 - 0.040 0.048 - 5870 - pF - 615 - pF - 135 - 107 1. 1 105 327 nC FDB2532 / FDP2532 / FDI2532 Rev. B ...
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... Figure 2. Maximum Continuous Drain Current RECTANGULAR PULSE DURATION ( PULSE WIDTH (s) Figure 4. Peak Current Capability 50 75 100 125 150 CASE TEMPERATURE ( C) C Case Temperature NOTES: DUTY FACTOR PEAK 10 FOR TEMPERATURES o ABOVE 25 C DERATE PEAK CURRENT AS FOLLOWS: 175 - 150 - FDB2532 / FDP2532 / FDI2532 Rev. B 175 ...
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... C J )/(1.3*RATED DSS DD 0 *R)/(1.3*RATED +1] AS DSS DD 0.01 0 TIME IN AVALANCHE (ms) AV Capability 10V PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 1.0 2.0 3.0 4.0 5 DRAIN TO SOURCE VOLTAGE ( 10V, I =33A 120 160 JUNCTION TEMPERATURE ( C) J FDB2532 / FDP2532 / FDI2532 Rev 6.0 200 ...
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... C) Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature ISS 150 Figure 14. Gate Charge Waveforms for Constant I = 250 120 160 JUNCTION TEMPERATURE ( 75V WAVEFORMS IN DESCENDING ORDER 33A 16A GATE CHARGE (nC) g Gate Currents FDB2532 / FDP2532 / FDI2532 Rev. B 200 100 ...
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... Fairchild Semiconductor Corporation DUT 0.01 Figure 16. Unclamped Energy Waveforms DUT g(TH g(REF) 0 Figure 18. Gate Charge Waveforms d(ON 90 DUT V GS 50% 10% 0 Figure 20. Switching Time Waveforms BV DSS g(TOT 10V GS Q gs2 OFF t d(OFF 10% 10% 90% 50% PULSE WIDTH FDB2532 / FDP2532 / FDI2532 Rev 90% ...
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... application’s ambient never exceeded (EQ 0.1 is (0.645) DM Figure 21. Thermal Resistance vs Mounting dissipation. Pulse (EQ. 2) Area in Inches Squared (EQ. 3) Area in Centimeters Squared R = 26.51+ 19.84/(0.262+Area) EQ 26.51+ 128/(1.69+Area) EQ (6.45) (64. AREA, TOP COPPER AREA in (cm ) Pad Area FDB2532 / FDP2532 / FDI2532 Rev ...
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... RDRAIN 6 ESG 8 EVTHRES + LGATE EVTEMP 8 RGATE + MSTRO RLGATE CIN S1A S2A S1B S2B EGS EDS LDRAIN DRAIN RLDRAIN RSLC1 DBREAK ESLC DBODY EBREAK MWEAK MMED LSOURCE SOURCE 8 7 RSOURCE RLSOURCE RBREAK 17 18 RVTEMP VBAT + 8 22 RVTHRES FDB2532 / FDP2532 / FDI2532 Rev ...
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... ESG 8 EVTHRES + LGATE EVTEMP 8 RGATE + MSTRO RLGATE CIN S1A S2A S1B S2B EGS EDS LDRAIN DRAIN RLDRAIN RSLC1 ISCL DBREAK 50 11 DBODY 16 MWEAK EBREAK MMED + 17 18 LSOURCE - SOURCE 8 7 RSOURCE RLSOURCE RBREAK 17 18 RVTEMP VBAT + 8 22 RVTHRES FDB2532 / FDP2532 / FDI2532 Rev ...
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... Fairchild Semiconductor Corporation JUNCTION th RTHERM1 CTHERM1 6 RTHERM2 CTHERM2 5 RTHERM3 CTHERM3 4 RTHERM4 CTHERM4 3 RTHERM5 CTHERM5 2 RTHERM6 CTHERM6 tl CASE FDB2532 / FDP2532 / FDI2532 Rev. B ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet Series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...