FDB6676 Fairchild Semiconductor, FDB6676 Datasheet

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FDB6676

Manufacturer Part Number
FDB6676
Description
30V N-Channel Logic Level PowerTrench MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet

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FDP6676/FDB6676
30V N-Channel Logic Level PowerTrench
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low R
Applications
.
G
2000 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
Synchronous rectifier
DC/DC converter
J
DSS
GSS
D
D
, T
JC
JA
Device Marking
S
STG
N-Channel
FDP6676
FDB6676
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation @ T
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
DS(ON)
MOSFET
.
TO-220
FDP Series
– Continuous
– Pulsed
has
FDP6676
FDB6676
Device
Parameter
been
C
G
Derate above 25 C
= 25 C
designed
T
S
A
=25
o
C unless otherwise noted
Reel Size
Tube
13”
(Note 1)
(Note 1)
TO-263AB
FDB Series
D
Features
42 A, 30 V.
Critical DC electrical parameters specified at
elevated temperature
High performance trench technology for extremely
low R
175 C maximum junction temperature rating
MOSFET
DS(ON)
Tape width
R
R
DS(ON)
DS(ON)
24mm
-65 to +175
Ratings
n/a
0.48
62.5
240
1.6
30
84
93
= 6.0 m
= 7.5 m
16
G
@ V
@ V
FDP6676/FDB6676 Rev C(W)
S
D
GS
GS
April 2001
= 10 V
= 4.5 V
800 units
Quantity
45
Units
W C
C/W
C/W
W
V
V
A
C

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FDB6676 Summary of contents

Page 1

... C unless otherwise noted A (Note 1) (Note Derate above 25 C Reel Size Tube 13” April 2001 DS(ON 7 4.5 V DS(ON Ratings Units 240 -65 to +175 C 1.6 C/W 62.5 C/W Tape width Quantity n/a 45 24mm 800 units FDP6676/FDB6676 Rev C(W) ...

Page 2

... Min Typ Max Units 370 mV 100 nA –100 –4.5 mV 4.9 7.5 7 141 S 5324 pF 841 pF 384 149 0.9 1.3 V FDP6676/FDB6676 Rev. C(W) ...

Page 3

... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 3.5V 4.0V 4.5V 6.0V 10V 120 I , DRAIN CURRENT ( 125 GATE TO SOURCE VOLTAGE ( 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDP6676/FDB6676 Rev. C(W) 150 10 1.2 ...

Page 4

... ISS C OSS C RSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 1.6°C 25° 100 1000 t , TIME (sec) 1 Power Dissipation. R ( 1.6 °C/W JC P(pk ( Duty Cycle 100 1000 FDP6676/FDB6676 Rev. C(W) ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ HiSeC™ DenseTrench™ ...

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