FDD4685 Fairchild Semiconductor, FDD4685 Datasheet
FDD4685
Specifications of FDD4685
Available stocks
Related parts for FDD4685
FDD4685 Summary of contents
Page 1
... R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDD4685 FDD4685 ©2006 Fairchild Semiconductor Corporation FDD4685 Rev.B ® MOSFET General Description = –8.4A This P-Channel MOSFET has been produced using Fairchild D Semiconductor’s proprietary PowerTrench = –7A D deliver low r superior performance in application ...
Page 2
... Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. 3: Starting T = 25° 3mH 9A FDD4685 Rev 25°C unless otherwise noted J Test Conditions I = –250µ –250µA, referenced to 25°C ...
Page 3
... GS 1.6 1.4 1.2 1.0 0.8 0.6 -50 - JUNCTION TEMPERATURE J Figure 3. Normalized On Resistance vs Junction Temperature 100 µ PULSE DURATION = 80 s DUTY CYCLE = 0.5%MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics FDD4685 Rev 25°C unless otherwise noted - - 100 125 150 - 3.0 PULSE DURATION = 80 ...
Page 4
... 0.01 0 TIME IN AVALANCHE(ms) AV Figure 9. Unclamped Inductive Switching Capability 200 100 10 1 OPERATION IN THIS SINGLE PULSE AREA MAY MAX RATED LIMITED DS(on) 0 DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area FDD4685 Rev 25°C unless otherwise noted -20V -30V 100 300 ...
Page 5
... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 SINGLE PULSE 1E FDD4685 Rev 25°C unless otherwise noted RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve NOTES: DUTY FACTOR PEAK θJC θ www.fairchildsemi.com ...
Page 6
... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete FDD4685 Rev. B OCX™ SILENT SWITCHER OCXPro™ SMART START™ ® OPTOLOGIC SPM™ OPTOPLANAR™ Stealth™ ...