FDD6N50 Fairchild Semiconductor, FDD6N50 Datasheet
FDD6N50
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FDD6N50 Summary of contents
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... Thermal Resistance, Junction-to-Case θJC R Thermal Resistance, Junction-to-Ambient θJA ©2006 Fairchild Semiconductor Corporation FDD6N50/FDU6N50 REV. A Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...
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... G ≤ 6A, di/dt ≤ 200A/µs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDD6N50/FDU6N50 REV. A Package Reel Size D-PAK 380mm D-PAK 380mm I-PAK - T = 25°C unless otherwise noted ...
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... I , Drain Current [A] D Figure 5. Capacitance Characteristics 1000 C iss C oss 100 C rss Drain-Source Voltage [V] DS FDD6N50/FDU6N50 REV. A Figure 2. Transfer Characteristics ∝ Notes : - 250 レ s Pulse Test 25∩ Figure 4. Body Diode Forward Voltage ...
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... 150 Single Pulse - Drain-Source Voltage [ FDD6N50/FDU6N50 REV. A (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 ♦ Notes : 250 µ A 0.5 D 0.0 100 150 200 -100 o C] Figure 10. Maximum Drain Current ...
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... Unclamped Inductive Switching Test Circuit & Waveforms FDD6N50/FDU6N50 REV. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...
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... FDD6N50/FDU6N50 REV. A Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 www.fairchildsemi.com ...
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... Mechanical Dimensions FDD6N50/FDU6N50 REV. A D-PAK 7 Dimensions in Millimeters www.fairchildsemi.com ...
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... Mechanical Dimensions FDD6N50/FDU6N50 REV. A (Continued) I-PAK 8 Dimensions in Millimeters www.fairchildsemi.com ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. FAST ® ACEx™ ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ ...