FDP12N50 Fairchild Semiconductor, FDP12N50 Datasheet

MOSFET N-CH 500V 11.5A TO-220

FDP12N50

Manufacturer Part Number
FDP12N50
Description
MOSFET N-CH 500V 11.5A TO-220
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet

Specifications of FDP12N50

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
650 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
11.5A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 10V
Input Capacitance (ciss) @ Vds
1315pF @ 25V
Power - Max
165W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.55 Ohms
Forward Transconductance Gfs (max / Min)
11.5 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
6.9 A
Power Dissipation
165 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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©2007 Fairchild Semiconductor Corporation
FDP12N50 / FDPF12N50 Rev. A
MOSFET Maximum Ratings
Thermal Characteristics
*Drain current limited by maximum junction temperature
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
FDP12N50 / FDPF12N50
N-Channel MOSFET
500V, 11.5A, 0.65Ω
Features
• R
• Low gate charge ( Typ. 22nC)
• Low C
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
J
L
DSS
GSS
AS
AR
D
θJC
θCS
θJA
, T
Symbol
Symbol
STG
DS(on)
G
rss
D
= 0.55Ω (Typ.)@ V
( Typ. 11pF)
S
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
TO-220
FDP Series
GS
= 10V, I
D
= 6A
T
C
= 25
Parameter
Parameter
-Continuous (T
-Continuous (T
(T
- Derate above 25
- Pulsed
C
o
G
C unless otherwise noted*
= 25
D
S
o
C)
C
C
= 25
= 100
1
o
C
TO-220F
FDPF Series
o
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
C)
o
C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
G
FDP12N50
FDP12N50
11.5
1.33
0.75
62.5
165
6.9
0.5
46
-55 to +150
16.7
11.5
500
±30
456
300
4.5
S
D
FDPF12N50
FDPF12N50
11.5 *
6.9 *
62.5
46 *
3.0
0.3
42
UniFET
-
June 2007
www.fairchildsemi.com
switching
Units
o
Units
W/
V/ns
C/W
mJ
mJ
o
o
W
V
V
A
A
A
C
C
o
C
TM
tm

Related parts for FDP12N50

FDP12N50 Summary of contents

Page 1

... R Thermal Resistance, Case to Sink Typ. θCS R Thermal Resistance, Junction to Ambient θJA ©2007 Fairchild Semiconductor Corporation FDP12N50 / FDPF12N50 Rev. A Description = 6A These N-Channel enhancement mode power field effect D transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...

Page 2

... Starting ≤ 11.5A, di/dt ≤ 200A/μs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDP12N50 / FDPF12N50 Rev unless otherwise noted C Package Reel Size TO-220 - TO-220F - Test Conditions I = 250μ ...

Page 3

... I , Drain Current [A] D Figure 5. Capacitance Characteristics 2000 C iss = oss C oss = rss = C gd 1500 C iss 1000 500 C rss 0 0 Drain-Source Voltage [V] DS FDP12N50 / FDPF12N50 Rev. A Figure 2. Transfer Characteristics *Notes: μ 1. 250 s Pulse Test Figure 4. Body Diode Forward Voltage 100 = 20V o * Note : Figure 6. Gate Charge Characteristics ...

Page 4

... DS(on) *Notes: 0 150 J 3. Single Pulse 0. Drain-Source Voltage [V] DS Figure 10. Maximum Drain Current vs. Case Temperature Case Temperature C FDP12N50 / FDPF12N50 Rev. A (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 *Notes: 0 μ 250 A D 0.0 100 150 200 100 20 μ s 100 μ ...

Page 5

... Typical Performance Characteristics Figure 11-1. Transient Thermal Response Curve - FDP12N50 3 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single pulse 1E Figure 11-2. Transient Thermal Response Curve - FDPF12N50 5 0.5 1 0.2 0.1 0.05 0.02 0.1 0.01 Single pulse 0. FDP12N50 / FDPF12N50 Rev. A (Continued) ...

Page 6

... FDP12N50 / FDPF12N50 Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... FDP12N50 / FDPF12N50 Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + • • • I • www.fairchildsemi.com ...

Page 8

... FDP12N50 / FDPF12N50 Rev www.fairchildsemi.com ...

Page 9

... Mechanical Dimensions 10.16 MAX1.47 0.80 ±0.10 #1 0.35 ±0.10 2.54TYP [2.54 ] ±0.20 9.40 FDP12N50 / FDPF12N50 Rev. A TO-220F ø3.18 ±0.20 ±0.10 (7.00) (1.00x45°) 2.54TYP [2.54 ] ±0.20 ±0.20 9 2.54 ±0.20 (0.70) +0.10 0.50 2.76 ±0.20 –0.05 www.fairchildsemi.com ...

Page 10

... TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx Green FPS™ e-Series™ Build it Now™ GTO™ CorePLUS™ i-Lo™ ...

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