FDP7030 Fairchild Semiconductor, FDP7030 Datasheet

no-image

FDP7030

Manufacturer Part Number
FDP7030
Description
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Manufacturer
Fairchild Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDP7030
Quantity:
5 000
Part Number:
FDP7030
Manufacturer:
FAIRCHILD
Quantity:
12 500
Part Number:
FDP7030BL
Manufacturer:
FAIRCHILD
Quantity:
161
Part Number:
FDP7030BL
Manufacturer:
FAIRCHILD
Quantity:
12 500
Part Number:
FDP7030BL
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
FDP7030L
Manufacturer:
FAI
Quantity:
1 000
Part Number:
FDP7030L
Manufacturer:
FDP7030L
Quantity:
20 000
_________________________________________________________________________________
© 1998 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
T
THERMAL CHARACTERISTICS
R
R
D
FDP7030BL / FDB7030BL
N-Channel Logic Level PowerTrench
General Description
J
L
This N-Channel Logic Level MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable R
specifications.
The result is a MOSFET that is easy and safer to drive (even
at very high frequencies), and DC/DC power supply designs
with higher overall efficiency.
DSS
GSS
D
,T
JC
JA
STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Total Power Dissipation @ T
- Continuous
- Pulsed
Derate above 25°C
T
C
C
= 25°C
= 25°C unless otherwise noted
(Note 1)
(Note 1)
DS(on)
TM
MOSFET
FDP7030BL
Features
60 A, 30 V. R
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
High performance trench technology for extremely low
R
175°C maximum junction temperature rating.
DS(ON)
.
-65 to 175
DS(ON)
R
0.43
62.5
±20
180
275
2.3
30
60
65
DS(ON)
= 0.009
G
= 0.0120
FDB7030BL
@ V
@ V
GS
= 10 V,
D
S
GS
= 4.5 V.
July 1998
FDP7030BL Rev.C
Units
W/°C
°C/W
°C/W
W
°C
°C
V
V
A

Related parts for FDP7030

FDP7030 Summary of contents

Page 1

... FDP7030BL / FDB7030BL N-Channel Logic Level PowerTrench General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R specifications ...

Page 2

... C -5 0.0073 0.009 T = 125°C 0.011 0.018 J 0.01 0.012 60 55 2400 480 200 180 1 1 0.79 5 FDP7030BL Rev.C Unit mV/ C µ mV ...

Page 3

... T = 125° 25° GATE TO SOURCE VOLTAGE (V) GS Figure 4. On-Resistance Variation with Gate-to-Source Voltage 125°C A 25°C -55°C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD Variation with Source Current and Temperature. 100 I = 30A D 10 1.2 1.4 FDP7030BL Rev.C ...

Page 4

... C iss C oss C rss 0 DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 2.3 °C 25°C C 0.001 0.01 0.1 0.5 1 SINGLE PULSE TIME (SEC) Dissipation. R ( =2.3 °C/W JC P(pk ( Duty Cycle 1000 3000 10000 FDP7030BL Rev ...

Related keywords