FGAF40N60UF Fairchild Semiconductor, FGAF40N60UF Datasheet

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FGAF40N60UF

Manufacturer Part Number
FGAF40N60UF
Description
Fairchild's UF series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FGAF40N60UF

Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Collector Current (dc) (max)
40A
Gate To Emitter Voltage (max)
±20V
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Lead Free Status / RoHS Status
Compliant

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©2004 Fairchild Semiconductor Corporation
FGAF40N60UF
Ultrafast IGBT
General Description
Fairchild's UF series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UF series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
Absolute Maximum Ratings
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
V
V
I
I
P
T
T
T
R
R
C
CM (1)
stg
J
L
CES
GES
D
Symbol
JC
JA
Symbol
(IGBT)
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
G C E
TO-3PF
Description
Parameter
T
C
= 25 C unless otherwise noted
@ T
@ T
@ T
@ T
C
C
C
C
Features
• High speed switching
• Low saturation voltage : V
• High input impedance
= 25 C
= 100 C
= 25 C
= 100 C
G
G
Typ.
FGAF40N60UF
--
--
-55 to +150
-55 to +150
600
160
100
300
40
20
40
20
CE(sat)
C
C
E
E
Max.
1.2
= 2.3 V @ I
40
IGBT
C
FGAF40N60UF Rev. A
Units
= 20A
Units
C/W
C/W
W
W
V
V
A
A
A
C
C
C

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FGAF40N60UF Summary of contents

Page 1

... High speed switching • Low saturation voltage : V • High input impedance TO-3PF unless otherwise noted C Description @ 100 100 C C Parameter IGBT = 2 20A CE(sat FGAF40N60UF Units 600 160 A 100 -55 to +150 C -55 to +150 C 300 C Typ. Max. Units -- 1.2 C C/W FGAF40N60UF Rev. A ...

Page 2

... V = 300 20A 15V GE -- Measured 5mm from PKG -- Typ. Max. Units -- -- V 0 250 uA -- ± 100 nA 5.1 6.5 V 2.3 3 1075 -- pF 170 -- 130 ns 35 100 ns 470 -- uJ 130 -- uJ 600 1000 110 200 ns 80 250 ns 500 -- uJ 310 -- uJ 810 1200 uJ 77 150 FGAF40N60UF Rev. A ...

Page 3

... C Fig 4. Load Current vs. Frequency 20 Common Emitter = 25 ℃ [V] GE Fig 6. Saturation Voltage vs =15V 1 Collector-Emitter Voltage, V (V) CE Characteristics Vcc = 300V Load Current : peak of square wave 1 10 100 1000 Frequency [kHz] Common Emitter = 125 ℃ 40A 20A Ic=10A Gate - Emitter Voltage FGAF40N60UF Rev ...

Page 4

... V = 300V ℃ 125 ℃ Fig 12. Turn-Off Characteristics vs. = ± 15V GE Ton Tr 10 100 ( Ω ) Gate Resistance =± 15V GE Eon Eoff 10 100 ( Ω ) Gate Resistance Common Emitter = ± 15V V = 300V ℃ 125 ℃ Collector Current, I [A] C Collector Current FGAF40N60UF Rev. A 200 200 40 ...

Page 5

... Fig 16. Turn-Off SOA Characteristics Rectangular Pulse Duration [sec] Fig 17. Transient Thermal Impedance of IGBT =15 Ω L 300V 200V Vcc=100V Gate Charge, Qg (nC) Safe Operating Area o V =20V, T =100 100 Collector-Emitter Voltage, V [V] CE Pdm t1 t2 Duty factor Peak Tj = Pdm Zthjc + FGAF40N60UF Rev. A 120 1000 ...

Page 6

... Fairchild Semiconductor Corporation TO-3PF 15.50 ø3.60 0.20 0.20 2.00 0.20 5.45TYP [5.45 ] 0.30 5.50 0.20 3.00 0.20 (1.50) 0.85 0.03 2.00 0.20 3.30 0.20 +0.20 0.90 –0.10 Dimensions in Millimeters FGAF40N60UF Rev. A ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ® ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FPS™ CROSSVOLT™ ...

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