FGB30N6S2 Fairchild Semiconductor, FGB30N6S2 Datasheet
FGB30N6S2
Specifications of FGB30N6S2
FGB30N6S2_NL
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FGB30N6S2 Summary of contents
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... C = 110° 150°C, Figure 20A 1.3mH 50V 25°C C > 25°C C August 2003 15V GE Symbol COLLECTOR (Flange) Ratings Units 600 108 A ±20 V ±30 V 60A at 600V 150 mJ 167 W 1.33 W/°C -55 to 150 °C -55 to 150 °C FGH30N6S2 / FGP30N6S2 / FGB30N6S2 Rev. A1 ...
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... Package Marking and Ordering Information Device Marking Device 30N6S2 FGH30N6S2 30N6S2 FGP30N6S2 30N6S2 FGB30N6S2 30N6S2 FGB30N6S2T Electrical Characteristics Symbol Parameter Off State Characteristics BV Collector to Emitter Breakdown Voltage CES BV Emitter to Collector Breakdown Voltage ECS I Collector to Emitter Leakage Current CES I Gate to Emitter Leakage Current ...
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... Figure 3. Operating Frequency vs Collector to Emitter Current 18 DUTY CYCLE < 0.5 10V GE 16 PULSE DURATION = 250 150 0.50 0.75 1.00 1.25 1. COLLECTOR TO EMITTER VOLTAGE (V) CE Figure 5. Collector to Emitter On-State Voltage ©2003 Fairchild Semiconductor Corporation 100 125 150 Figure 2. Minimum Switching Safe Operating Area 15V ...
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... COLLECTOR TO EMITTER CURRENT (A) CE Figure 9. Turn-On Delay Time vs Collector to Emitter Current 500 390V COLLECTOR TO EMITTER CURRENT (A) CE Figure 11. Turn-Off Delay Time vs Collector to Emitter Current ©2003 Fairchild Semiconductor Corporation (Continued) 600 500 400 300 200 10V 15V GE GE 100 Figure 8. Turn-Off Energy Loss vs Collector 125 ...
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... T , CASE TEMPERATURE ( C Figure 15. Total Switching Loss vs Case Temperature 1.4 FREQUENCY = 1MHz 1.2 1.0 0.8 C IES 0.6 0.4 C OES 0.2 C RES 0 COLLECTOR TO EMITTER VOLTAGE (V) CE Figure 17. Capacitance vs Collector to Emitter Voltage ©2003 Fairchild Semiconductor Corporation (Continued 15V 24A 12A CE I ...
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... SINGLE PULSE - Figure 19. IGBT Normalized Transient Thermal Impedance, Junction to Case Test Circuit and Waveforms L = 200mH FGP30N6S2 Figure 20. Inductive Switching Test Circuit ©2003 Fairchild Semiconductor Corporation (Continued RECTANGULAR PULSE DURATION (s) 1 FGP30N6S2D DIODE TA49390 390V d(OFF Figure 21. Switching Test Waveforms ...
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... Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. ©2003 Fairchild Semiconductor Corporation Operating Frequency Information Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ ...