FGB30N6S2 Fairchild Semiconductor, FGB30N6S2 Datasheet

no-image

FGB30N6S2

Manufacturer Part Number
FGB30N6S2
Description
IGBT N-CH SMPS 600V 45A TO263AB
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FGB30N6S2

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 12A
Current - Collector (ic) (max)
45A
Power - Max
167W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Other names
FGB30N6S2_NL
FGB30N6S2_NL

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FGB30N6S2D
Manufacturer:
FAIRCHILD
Quantity:
12 500
©2003 Fairchild Semiconductor Corporation
FGH30N6S2 / FGP30N6S2 / FGB30N6S2
600V, SMPS II Series N-Channel IGBT
General Description
The FGH30N6S2, FGP30N6S2, and FGB30N6S2 are Low
Gate Charge, Low Plateau Voltage SMPS II IGBTs combin-
ing the fast switching speed of the SMPS IGBTs along with
lower gate charge and plateau voltage and avalanche capa-
bility (UIS). These LGC devices shorten delay times, and
reduce the power requirement of the gate drive. These de-
vices are ideally suited for high voltage switched mode pow-
er supply applications where low conduction loss, fast
switching times and UIS capability are essential. SMPS II
LGC devices have been specially designed for:
Formerly Developmental Type TA49367.
Device Maximum Ratings
Package
NOTE:
1. Pulse width limited by maximum junction temperature.
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
• Power Factor Correction (PFC) circuits
• Full bridge topologies
• Half bridge topologies
• Push-Pull circuits
• Uninterruptible power supplies
• Zero voltage and zero current switching circuits
Symbol
BV
SSOA
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
V
V
T
I
I
E
C110
I
C25
GEM
P
GES
STG
CM
T
AS
CES
D
J
TO-247
Collector to Emitter Breakdown Voltage
Collector Current Continuous, T
Collector Current Continuous, T
Collector Current Pulsed (Note 1)
Gate to Emitter Voltage Continuous
Gate to Emitter Voltage Pulsed
Switching Safe Operating Area at T
Pulsed Avalanche Energy, I
Power Dissipation Total T
Power Dissipation Derating T
Operating Junction Temperature Range
Storage Junction Temperature Range
COLLECTOR
(Back-Metal)
E
C
G
C
T
= 25°C
C
CE
TO-220AB
= 25°C unless otherwise noted
C
= 20A, L = 1.3mH, V
> 25°C
C
C
Parameter
= 25°C
= 110°C
J
= 150°C, Figure 2
E
C
G
Features
• 100kHz Operation at 390V, 14A
• 200kHZ Operation at 390V, 9A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . 90ns at TJ = 125
• Low Gate Charge . . . . . . . . . 23nC at V
• Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical
• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 150mJ
• Low Conduction Loss
G
DD
E
TO-263AB
= 50V
COLLECTOR
(Flange)
FGH30N6S2 / FGP30N6S2 / FGB30N6S2 Rev. A1
60A at 600V
-55 to 150
-55 to 150
Ratings
1.33
600
108
±20
±30
150
167
G
45
20
August 2003
Symbol
GE
C
E
Units
W/°C
= 15V
mJ
°C
°C
W
V
A
A
A
V
V
o
C

Related parts for FGB30N6S2

FGB30N6S2 Summary of contents

Page 1

... C = 110° 150°C, Figure 20A 1.3mH 50V 25°C C > 25°C C August 2003 15V GE Symbol COLLECTOR (Flange) Ratings Units 600 108 A ±20 V ±30 V 60A at 600V 150 mJ 167 W 1.33 W/°C -55 to 150 °C -55 to 150 °C FGH30N6S2 / FGP30N6S2 / FGB30N6S2 Rev. A1 ...

Page 2

... Package Marking and Ordering Information Device Marking Device 30N6S2 FGH30N6S2 30N6S2 FGP30N6S2 30N6S2 FGB30N6S2 30N6S2 FGB30N6S2T Electrical Characteristics Symbol Parameter Off State Characteristics BV Collector to Emitter Breakdown Voltage CES BV Emitter to Collector Breakdown Voltage ECS I Collector to Emitter Leakage Current CES I Gate to Emitter Leakage Current ...

Page 3

... Figure 3. Operating Frequency vs Collector to Emitter Current 18 DUTY CYCLE < 0.5 10V GE 16 PULSE DURATION = 250 150 0.50 0.75 1.00 1.25 1. COLLECTOR TO EMITTER VOLTAGE (V) CE Figure 5. Collector to Emitter On-State Voltage ©2003 Fairchild Semiconductor Corporation 100 125 150 Figure 2. Minimum Switching Safe Operating Area 15V ...

Page 4

... COLLECTOR TO EMITTER CURRENT (A) CE Figure 9. Turn-On Delay Time vs Collector to Emitter Current 500 390V COLLECTOR TO EMITTER CURRENT (A) CE Figure 11. Turn-Off Delay Time vs Collector to Emitter Current ©2003 Fairchild Semiconductor Corporation (Continued) 600 500 400 300 200 10V 15V GE GE 100 Figure 8. Turn-Off Energy Loss vs Collector 125 ...

Page 5

... T , CASE TEMPERATURE ( C Figure 15. Total Switching Loss vs Case Temperature 1.4 FREQUENCY = 1MHz 1.2 1.0 0.8 C IES 0.6 0.4 C OES 0.2 C RES 0 COLLECTOR TO EMITTER VOLTAGE (V) CE Figure 17. Capacitance vs Collector to Emitter Voltage ©2003 Fairchild Semiconductor Corporation (Continued 15V 24A 12A CE I ...

Page 6

... SINGLE PULSE - Figure 19. IGBT Normalized Transient Thermal Impedance, Junction to Case Test Circuit and Waveforms L = 200mH FGP30N6S2 Figure 20. Inductive Switching Test Circuit ©2003 Fairchild Semiconductor Corporation (Continued RECTANGULAR PULSE DURATION (s) 1 FGP30N6S2D DIODE TA49390 390V d(OFF Figure 21. Switching Test Waveforms ...

Page 7

... Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. ©2003 Fairchild Semiconductor Corporation Operating Frequency Information Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ ...

Related keywords