FGPF4633 Fairchild Semiconductor, FGPF4633 Datasheet

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FGPF4633

Manufacturer Part Number
FGPF4633
Description
Using Novel Trench IGBT Technology, Fairchild's new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential
Manufacturer
Fairchild Semiconductor
Datasheet

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Part Number:
FGPF4633
Manufacturer:
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20 000
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©2010 Fairchild Semiconductor Corporation
FGPF4633 Rev. B
Absolute Maximum Ratings
Thermal Characteristics
Notes:
(1) Half Sine Wave, D < 0.01, pluse width < 5
* Ic_pluse limited by max Tj
FGPF4633
330V PDP IGBT
Features
• High current capability
• Low saturation voltage: V
• High input impedance
• Fast switching
• RoHS compliant
Applications
V
V
I
P
T
T
T
R
R
C pulse(1)*
stg
J
L
CES
GES
D
θJC
θJA
PDP System
Symbol
Symbol
(IGBT)
G
C
E
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
CE(sat)
TO-220F
(Retractable)
μ
= 1.55 V @ I
sec
Description
Parameter
C
= 70A
@ T
@ T
@ T
C
C
C
1
= 25
= 25
= 100
General Description
Using Novel Trench IGBT Technology, Fairchild’s new series of
trench IGBTs offer the optimum performance for PDP applica-
tions where low conduction and switching losses are essential.
o
o
C
C
o
C
Typ.
-
-
-55 to +150
-55 to +150
Ratings
± 30
30.5
12.2
330
300
300
Max.
62.5
4.1
August 2010
www.fairchildsemi.com
Units
Units
o
o
C/W
C/W
o
o
o
W
W
V
V
A
C
C
C

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FGPF4633 Summary of contents

Page 1

... Notes: μ (1) Half Sine Wave, D < 0.01, pluse width < Ic_pluse limited by max Tj ©2010 Fairchild Semiconductor Corporation FGPF4633 Rev. B General Description Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applica- = 70A C tions where low conduction and switching losses are essential. ...

Page 2

... Rise Time r t Turn-Off Delay Time d(off) t Fall Time f Q Total Gate Charge g Q Gate to Emitter Charge ge Q Gate to Collector Charge gc FGPF4633 Rev. B Packaging Package Type TO-220F Tube T = 25°C unless otherwise noted C Test Conditions = 0V 250μ 0V 250μA ...

Page 3

... Collector-Emitter Voltage, V Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 1.8 Common Emitter V = 15V GE 1.6 1.4 1.2 1.0 0.8 -55 - Collector-EmitterCase Temperature, T FGPF4633 Rev. B Figure 2. Typical Output Characteristics 300 15V 12V 250 200 10V 150 100 [V] CE Figure 4. Transfer Characteristics 300 ...

Page 4

... V = 100V Gate Charge, Q Figure 11. Turn-on Characteristics vs. Gate Resistance d(on Gate Resistance, R FGPF4633 Rev. B Figure 8. Capacitance Characteristics GE 3000 Common Emitter 125 C C 2000 1000 [V] GE Figure 10. SOA Characteristics 200V 0. [nC] g Figure 12. Turn-off Characteristics vs. ...

Page 5

... T = 125 C C 0.1 0. Gate Resistance, R Figure 17. Turn off Switching SOA Characteristics 500 100 10 1 Safe Operating Area Collector-Emitter Voltage, V FGPF4633 Rev. B Figure 14. Turn-off Characteristics vs. 500 100 Common Emitter V = 15V Ω 125 ...

Page 6

... Typical Performance Characteristics Figure 18.Transient Thermal Impedance of IGBT 5 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 single pulse 0.01 0.006 0.00001 FGPF4633 Rev Duty Factor t1/t2 Peak T 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration [sec Pdm x Zthjc + 100 www.fairchildsemi.com ...

Page 7

... Package Dimensions * Front/Back Side Isolation Voltage : AC 2700V FGPF4633 Rev. B TO-220F (Retractable) 7 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FGPF4633 Rev. B F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ...

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