FJAF6810 Fairchild Semiconductor, FJAF6810 Datasheet
FJAF6810
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FJAF6810 Summary of contents
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... Base-Emitter Saturation Voltage Storage Time STG t * Fall Time F * Pulse Test: PW=20 s, duty Cycle=1% Pulsed Thermal Characteristics Symbol R Thermal Resistance, Junction to Case jC ©2001 Fairchild Semiconductor Corporation FJAF6810 = 1500V CBO T =25 C unless otherwise noted C Parameter T =25 C unless otherwise noted C Test Conditions V =1400V ...
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... 0.1 0.01 0 [A], COLLECTOR CURRENT C Figure 3. Collector-Emitter Saturation Voltage 125 0.0 0.2 0.4 0.6 V [V], BASE-EMITTER VOLTAGE BE Figure 5. Base-Emitter On Voltage ©2001 Fairchild Semiconductor Corporation 100 I =0. =0. =0. 0 125 0 ...
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... Figure 9. Reverse Bias Safe Operating Area 100 C], CASE TEMPERATURE Figure 11. Power Derating ©2001 Fairchild Semiconductor Corporation (Continued 0.1 10 Figure 8. Resistive Load Switching Time 100 15A 30V 200 ...
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... Package Demensions 2.00 0.20 2.00 0.20 4.00 0.20 +0.20 0.75 –0.10 5.45TYP [5.45 ] 0.30 ©2001 Fairchild Semiconductor Corporation TO-3PF 15.50 ø3.60 0.20 0.20 0.85 0.03 2.00 0.20 5.45TYP [5.45 ] 0.30 5.50 0.20 3.00 0.20 (1.50) 2.00 0.20 3.30 0.20 +0.20 0.90 –0.10 Dimensions in Millimeters Rev. A2, May 2001 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ GTO™ ...