FM25CL64-DG Cypress Semiconductor, FM25CL64-DG Datasheet

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FM25CL64-DG

Manufacturer Part Number
FM25CL64-DG
Description
F-RAM 64K (8Kx8) 2.7V
Manufacturer
Cypress Semiconductor
Datasheet

Specifications of FM25CL64-DG

Product Category
F-RAM
Rohs
yes
Memory Size
64 KB
Organization
8 K x 8
Interface
SPI
Operating Supply Voltage
2.7 V to 3.6 V
Operating Temperature Range
- 40 C to + 85 C
Mounting Style
SMD/SMT
Package / Case
DFN-8
Factory Pack Quantity
81

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Part Number
Manufacturer
Quantity
Price
Part Number:
FM25CL64-DG
Manufacturer:
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Quantity:
3 797
FM25CL64
64Kb Serial 3V F-RAM Memory
Features
64K bit Ferroelectric Nonvolatile RAM
Very Fast Serial Peripheral Interface - SPI
Description
The FM25CL64 is a 64-kilobit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or F-RAM is
nonvolatile and performs reads and writes like a
RAM. It provides reliable data retention for 45 years
while eliminating the complexities, overhead, and
system
EEPROM and other nonvolatile memories.
Unlike serial EEPROMs, the FM25CL64 performs
write operations at bus speed. No write delays are
incurred. Data is written to the memory array
immediately after each byte has been transferred to
the device. The next bus cycle may commence
without the need for data polling. In addition, the
product offers virtually unlimited write endurance,
orders of magnitude more endurance than EEPROM.
F-RAM also exhibits much lower power during
writes than EEPROM since write operations do not
require an internally elevated power supply voltage
for write circuits.
These capabilities make the FM25CL64 ideal for
nonvolatile memory applications requiring frequent
or rapid writes. Examples range from data collection,
where the number of write cycles may be critical, to
demanding industrial controls where the long write
time of EEPROM can cause data loss.
The FM25CL64 provides substantial benefits to users
of
replacement. The FM25CL64 uses the high-speed
SPI bus, which enhances the high-speed write
capability
specifications are guaranteed over an industrial
temperature range of -40°C to +85°C.
This product conforms to specifications per the terms of the Ramtron
standard warranty. The product has completed Ramtron’s internal
qualification testing and has reached production status.
Rev. 3.5
Feb. 2011
Organized as 8,192 x 8 bits
Unlimited Read/Write Cycles
45 Year Data Retention
NoDelay™ Writes
Advanced High-Reliability Ferroelectric Process
Up to 20 MHz Frequency
Direct Hardware Replacement for EEPROM
SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)
serial
level
EEPROM
of
reliability
F-RAM
as
problems
a
technology.
hardware
caused
drop-in
Device
by
Sophisticated Write Protection Scheme
Low Power Consumption
Industry Standard Configuration
Pin Configuration
† Grade 3 AEC-Q100 Qualified
* End of life. Last time buy June 2009.
Pin Name
/CS
/WP
/HOLD
SCK
SI
SO
VDD
VSS
Ordering Information
FM25CL64-G †
FM25CL64-GTR †
FM25CL64-DG
FM25CL64-DGTR
FM25CL64-S *
FM25CL64-STR *
Hardware Protection
Software Protection
Low Voltage Operation 2.7-3.65V
1 µA Standby Current
Industrial Temperature -40°C to +85°C
8-pin “Green”/RoHS SOIC and TDFN Packages
Grade 3 AEC-Q100 Qualified (SOIC only)
VSS
WP
SO
CS
1850 Ramtron Drive, Colorado Springs, CO 80921
VSS
/WP
/CS
SO
Function
Chip Select
Write Protect
Hold
Serial Clock
Serial Data Input
Serial Data Output
Supply Voltage
Ground
1
2
3
4
Top View
1
2
3
4
Ramtron International Corporation
“Green” 8-pin SOIC
“Green” 8-pin SOIC,
Tape & Reel
“Green” 8-pin TDFN
“Green” 8-pin TDFN,
Tape & Reel
8-pin SOIC
8-pin SOIC, Tape & Reel
(800) 545-FRAM, (719) 481-7000
8
7
6
5
8
7
6
5
http://www.ramtron.com
VDD
/HOLD
SCK
SI
VDD
HOLD
SCK
SI
Page 1 of 14

Related parts for FM25CL64-DG

FM25CL64-DG Summary of contents

Page 1

... Pin Name /CS /WP /HOLD SCK SI SO VDD VSS Ordering Information FM25CL64-G † FM25CL64-GTR † FM25CL64-DG drop-in FM25CL64-DGTR FM25CL64-S * Device FM25CL64-STR * † Grade 3 AEC-Q100 Qualified * End of life. Last time buy June 2009. 1850 Ramtron Drive, Colorado Springs, CO 80921 VDD 1 8 HOLD 2 7 SCK ...

Page 2

... SO may be connected to SI for a single pin data interface. VDD Supply Power Supply (2.7V to 3.65V) VSS Supply Ground Rev. 3.5 Feb. 2011 13 Counter Data I/O Register Nonvolatile Status Figure 1. Block Diagram FM25CL64 2,048 x 32 FRAM Array Register Page ...

Page 3

... This is explained in more detail in the interface section. Users expect several obvious system benefits from the FM25CL64 due to its fast write cycle and high endurance as compared with EEPROM. In addition there are less obvious benefits as well. For example in a high noise environment, the fast-write operation is less susceptible to corruption than an EEPROM since it is completed quickly ...

Page 4

... SPI Mode 0: CPOL=0, CPHA=0 7 SPI Mode 3: CPOL=1, CPHA=1 7 Rev. 3.5 Feb. 2011 SO SI SCK SO FM25CL64 FM25CL64 CS HOLD Figure 4. SPI Modes 0 & 3 FM25CL64 SI SCK HOLD MOSI : Master Out Slave In MISO : Master In Slave Out SS : Slave Select Page ...

Page 5

... SCK. Command Structure There are six commands called op-codes that can be issued by the bus master to the FM25CL64. They are listed in the table below. These op-codes control the functions performed by the memory. They can be divided into three categories. First, there are commands that have no subsequent operations ...

Page 6

... Status Register. Reading Status provides information about the current state of the write protection features. Following the RDSR op- code, the FM25CL64 will return one byte with the contents of the Status Register. The Status Register is described in detail in a later section. ...

Page 7

... The SPI interface, which is capable of a relatively high clock frequency, highlights the fast write capability of the F-RAM technology. Unlike SPI-bus EEPROMs, the FM25CL64 can perform sequential writes at bus speed. No page register is needed and any number of sequential writes may be performed. Write Operation All writes to the memory begin with a WREN op- code with /CS being asserted and deasserted ...

Page 8

... Address MSB 13-bit Address MSB Figure 10. Memory Read FM25CL64 Data LSB MSB LSB ...

Page 9

... DD Min Typ 2 -0.3 V – other inputs -0.3V FM25CL64 Ratings -1.0V to +5.0V -1.0V to +5.0V and V < V +1. -55° 125°C 300° C 4kV 300V MSL-1 Max Units Notes 3. 0. µA 2 ±1 µA 3 ±1 µA ...

Page 10

... L V 2.7 to 3.0V DD Min Max 3.3V) DD Min - - 10% and 90 0 FM25CL64 V 3.0 to 3.65V DD Min Max Units Notes 0 20 MHz 2 2,3 ...

Page 11

... Serial Data Bus Timing tCSU 1/fCK tH tSU /Hold Timing Data Retention (V = 2.7V to 3.65V, +85°C) DD Parameter Data Retention Rev. 3.5 Feb. 2011 tF tR tODV tOH Min Max Units 45 - Years FM25CL64 tD tCSH tCL tCH tOD Notes Page ...

Page 12

... Legend: XXXXX= part number, P= package type, T= temperature (A=automotive, blank=ind.) LLLLLLL= lot code XXXXXX-PT RIC=Ramtron Int’l Corp, YY=year, WW=work week LLLLLLL RICYYWW Example: FM25CL64, “Green” SOIC package, Year 2006, Work Week 29 FM25CL64G A60013G1 RIC0629 Rev. 3.5 Feb. 2011 Recommended PCB Footprint 3 ...

Page 13

... Legend: R=Ramtron, G=”green”/RoHS TDFN package, XXXX=base part number LLLL= lot code, RGXXXX YY=year, WW=work week LLLL YYWW Example: “Green” TDFN package, FM25CL64, Lot 0013, Year 2006, Work Week 29 RG5L64 0013 0629 Rev. 3.5 Feb. 2011 Exposed metal pad. Do not connect to anything except Vss ...

Page 14

... Added tape and reel ordering information. Added note that SOIC device is Grade 3 AEC-Q100 qualified. Added last time buy notice on –S ordering numbers. 3.5 2/18/2011 Not recommended for new designs. Alternative: FM25CL64B. Rev. 3.5 Feb. 2011 spec limits. Removed 5MHz I DD FM25CL64 entry. ...

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