FQD13N10 Fairchild Semiconductor, FQD13N10 Datasheet

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FQD13N10

Manufacturer Part Number
FQD13N10
Description
Manufacturer
Fairchild Semiconductor
Datasheet

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©2009 Fairchild Semiconductor Corporation
FQD13N10 / FQU13N10
100V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.
Absolute Maximum Ratings
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
JA
JA
STG
G
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
S
FQD Series
D-PAK
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
A
C
= 25°C) *
Parameter
= 25°C)
Parameter
G
T
D
C
C
C
= 25°C unless otherwise noted
S
= 25°C)
= 100°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 10A, 100V, R
• RoHS Compliant
• Low gate charge ( typical 12 nC)
• Low Crss ( typical 20 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
FQU Series
I-PAK
FQD13N10 / FQU13N10
DS(on)
Typ
--
--
--
-55 to +150
= 0.18
0.32
300
100
6.3
4.0
6.0
2.5
10
40
95
10
40
25
G
@V
!
!
Max
3.13
110
50
GS
! "
! "
January 2009
= 10 V
QFET
!
!
!
!
S
D
"
"
"
"
"
"
Rev. A2. January 2009
Units
W/°C
Units
°C/W
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
W
V
A
A
A
V
A
®

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FQD13N10 Summary of contents

Page 1

... A = 25°C) C Parameter January 2009 QFET = 0. DS(on " " ! " ! " " " " " FQD13N10 / FQU13N10 Units 100 6 4.0 mJ 6.0 V/ns 2 0.32 W/°C -55 to +150 °C 300 °C Typ Max ...

Page 2

... ≤ 12.8A, di/dt ≤ 300A ≤ DSS, 4. Pulse Test : Pulse width ≤ 300 s, Duty cycle ≤ Essentially independent of operating temperature ©2009 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25°C ...

Page 3

... Drain Current and Gate Voltage 900 750 600 C 450 C 300 C 150 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2009 Fairchild Semiconductor Corporation ※ Notes : 1. 250μ s Pulse Test 25℃ Figure 2. Transfer Characteristics ※ ...

Page 4

... V , Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2009 Fairchild Semiconductor Corporation (Continued) 2.5 2.0 1.5 1.0 ※ Notes : 0 250 μ 0.0 100 150 200 -100 o C] Figure 8 ...

Page 5

... Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2009 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2009 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type ...

Page 7

... Package Dimensions TO-252 (DPAK) (FS PKG Code 36) ©2009 Fairchild Semiconductor Corporation 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: millimeters Part Weight per unit (gram): 0.33 Rev. A2. January 2009 ...

Page 8

... Package Dimensions (Continued) 6.60 0.20 5.34 0.20 (0.50) (4.34) MAX0.96 0.76 0.10 2.30TYP [2.30 0.20] ©2009 Fairchild Semiconductor Corporation IPAK (0.50) 2.30TYP [2.30 0.20] 2.30 0.20 0.50 0.10 0.50 0.10 Rev. A2. January 2009 ...

Page 9

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ ...

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