IGB03N120H2 Infineon Technologies, IGB03N120H2 Datasheet
IGB03N120H2
Specifications of IGB03N120H2
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IGB03N120H2 Summary of contents
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... Operating junction and storage temperature Soldering temperature (reflow soldering, MSL1) 2 J-STD-020 and JESD-022 Power Semiconductors 2 for target applications http://www.infineon.com/igbt Marking off j 0.15mJ 150°C G03H1202 Symbol jmax IGB03N120H2 G PG-TO263-3-2 Package PG-TO263-3-2 Value Unit 1200 V A 9.6 3.9 9 -40...+150 245 Rev. 2.4 Oct ...
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... PCB is vertical without blown air. Power Semiconductors Symbol Conditions Symbol Conditions (one layer thick) copper area for 2 IGB03N120H2 Max. Value Unit 2.0 K/W 40 Value Unit min. Typ. max. 1200 - - V - 2.2 2 2.4 - 2 100 205 - Rev. 2.4 Oct. 07 ...
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... Symbol Conditions Energy losses include “tail” and diode reverse recovery. Symbol Conditions IGB03N120H2 Value Unit min. typ. max 281 - - 0. 0. 0.29 - Value Unit min. typ. max 340 - - 0. 0. 0.48 - Value Unit min. typ. max 0. 0.09 - Rev. 2.4 Oct. 07 ...
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... V Figure 2. Safe operating area ( 12A 10A 125°C 25°C Figure 4. Collector current as a function of case temperature (V 15V IGB03N120H2 100 s 500 s DC 10V 100V 1000V , - COLLECTOR EMITTER VOLTAGE 150 50°C 75°C 100°C 125°C 150°C ...
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... Figure 7. Typical transfer characteristics (V = 20V) CE Power Semiconductors 10A COLLECTOR CE Figure 6. Typical output characteristics (T = 150 -50° Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (V = 15V IGB03N120H2 =15V 12V 10V EMITTER VOLTAGE =1.5A C 0°C 50°C 100°C 150°C JUNCTION TEMPERATURE Rev. 2.4 Oct. 07 ...
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... Figure 10. Typical switching times as a function of gate resistor (inductive load 800V dynamic test circuit in Fig. 125°C 150°C -50°C Figure 12. Gate-emitter threshold voltage as a function of junction temperature (I = 0.09mA IGB03N120H2 t d(off d(on 100 150 R , GATE RESISTOR G = 150 +15V/0V 3A 0°C 50°C 100° ...
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... E 0.16mJ ts 0.12mJ 0.08mJ E off 0.04mJ 0.00mJ 0V/us 125°C 150°C Figure 16. Typical turn off switching energy loss for soft switching (dynamic test circuit in Fig IGB03N120H2 and E include losses on ts due to diode recovery. E off 100 150 200 250 R , GATE RESISTOR ...
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... Figure 17. Typical gate charge (I = 3A) C 1000V 800V C iss 600V 400V C oss 200V C rss 0V 30V Figure 20. Typical turn off behavior, hard switching (V GE Dynamic test circuit in Figure E) 8 IGB03N120H2 U =240V CE U =960V CE 10nC 20nC Q , GATE CHARGE 0.0 0.2 0.4 0.6 0.8 1.0 1 ...
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... PULSE WIDTH p Figure 21. Typical turn off behavior, soft switching (V =15/0V, R =82Ω Dynamic test circuit in Figure E) Power Semiconductors 2.4 2.8 = 150 C, 9 IGB03N120H2 Rev. 2.4 Oct. 07 ...
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... Power Semiconductors PG-TO263-3-2 10 IGB03N120H2 Rev. 2.4 Oct. 07 ...
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... Figure A. Definition of switching times Figure B. Definition of switching losses Power Semiconductors IGB03N120H2 i Figure C. Definition of diodes switching characteristics ( Figure D. Thermal equivalent circuit ½ L öö DUT (Diode ½ L Figure E. Dynamic test circuit Leakage inductance L = 180nH, Stray capacitor C = 40pF, Relief capacitor C ZVT switching) ...
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... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors IGB03N120H2 12 Rev. 2.4 Oct. 07 ...