IRF1010N International Rectifier, IRF1010N Datasheet

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IRF1010N

Manufacturer Part Number
IRF1010N
Description
Power MOSFET(Vdss=55V/ Rds(on)=11mohm/ Id=85A)
Manufacturer
International Rectifier
Datasheet

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Absolute Maximum Ratings
Thermal Resistance
Advanced HEXFET
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts.
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
www.irf.com
Description
I
I
I
P
V
I
E
dv/dt
T
T
R
R
R
D
D
DM
AR
J
STG
D
GS
AR
@ T
@ T
JC
CS
JA
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
@T
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
®
Power MOSFETs from International
Parameter
Parameter
The low thermal
GS
GS
@ 10V
@ 10V
G
Typ.
300 (1.6mm from case )
0.50
–––
–––
10 lbf•in (1.1N•m)
HEXFET
-55 to + 175
S
D
TO-220AB
Max.
85
290
180
± 20
1.2
3.6
60
43
18
IRF1010N
®
R
Power MOSFET
DS(on)
Max.
V
0.85
–––
I
62
D
DSS
= 85A
PD - 91278
= 55V
= 11m
Units
Units
W/°C
°C/W
V/ns
mJ
°C
W
A
V
A
1
3/16/01

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IRF1010N Summary of contents

Page 1

... Case-to-Sink, Flat, Greased Surface CS R Junction-to-Ambient JA www.irf.com G The low thermal @ 10V GS @ 10V GS 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Typ. ––– 0.50 ––– 91278 IRF1010N ® HEXFET Power MOSFET 55V DSS R = 11m DS(on 85A D S TO-220AB Max. Units 85 ...

Page 2

... IRF1010N Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...

Page 3

... BOTTOM 100 10 ° 1 0.1 10 100 Fig 2. Typical Output Characteristics 2 2.0 ° 175 C J 1.5 1.0 0.5 = 25V 0.0 -60 -40 - Fig 4. Normalized On-Resistance IRF1010N VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 4.5V 20µs PULSE WIDTH T = 175 C ° Drain-to-Source Voltage (V) DS 85A V = 10V 100 120 140 160 180 ° ...

Page 4

... IRF1010N 6000 0V, C iss = rss = C gd 5000 C oss = Ciss 4000 3000 Coss 2000 1000 Crss Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 T = 175 C ° ° 0.1 0.0 0.6 1.2 V ,Source-to-Drain Voltage (V) SD Fig 7 ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com Fig 10a. Switching Time Test Circuit V DS 90% 125 150 175 ° 10 Fig 10b. Switching Time Waveforms 0.001 t , Rectangular Pulse Duration (sec) 1 IRF1010N D.U. Pulse Width µs Duty Factor ...

Page 6

... IRF1010N Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 6 500 400 ...

Page 7

... R I controlled by Duty Factor "D" SD D.U.T. - Device Under Test Period D = P.W. Waveform SD Body Diode Forward Current di/dt Waveform DS Diode Recovery dv/dt Body Diode Forward Drop Ripple 5% = 5.0V for Logic Level and 3V Drive Devices GS ® HEXFET power MOSFETs IRF1010N + + P.W. Period [ ] *** V =10V ...

Page 8

... IRF1010N Package Outline TO-220AB Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.11 3) 2.62 (.10 3) 15.24 (.60 0) 14.84 (. 14.09 (.55 5) 13.47 (. .40 (.0 55 .15 (.0 45) 2.54 (.100 & 14. 982. ...

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