IRF1405 International Rectifier, IRF1405 Datasheet
IRF1405
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IRF1405 Summary of contents
Page 1
... Parameter R Junction-to-Case JC R Case-to-Sink, Flat, Greased Surface CS R Junction-to-Ambient JA www.irf.com AUTOMOTIVE MOSFET G ® Power MOSFETs @ 10V GS @ 10V GS PD -93991A IRF1405 ® HEXFET Power MOSFET 55V DSS R = 5.3m DS(on 169A† TO-220AB Max. Units 169† 118† ...
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... IRF1405 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...
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... BOTTOM 100 ° 10 0.1 10 100 Fig 2. Typical Output Characteristics 3 ° 175 C 2.5 J 2.0 1.5 1.0 0.5 = 25V 0.0 -60 -40 - Fig 4. Normalized On-Resistance IRF1405 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 4.5V 20µs PULSE WIDTH ° 175 Drain-to-Source Voltage (V) DS 169A V = 10V 100 120 140 160 180 ° ...
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... IRF1405 100000 0V, C iss = rss = oss = 10000 Ciss Coss 1000 Crss 100 Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 ° 175 C J 100 ° 0.0 0.5 1.0 1.5 V ,Source-to-Drain Voltage (V) SD Fig 7 ...
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... Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 150 175 ° 10 d(on) Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.001 t , Rectangular Pulse Duration (sec) 1 IRF1405 D.U. µ d(off ...
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... IRF1405 Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D ...
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... Figure 15, 16). jmax t Average time in avalanche 125 150 175 D = Duty cycle in avalanche = Transient thermal resistance, see figure 11) thJC (ave) IRF1405 Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25°C due to avalanche losses 1.0E-03 1.0E-02 1.0E-01 . This is validated for jmax jmax · 1/2 ( 1.3· ...
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... IRF1405 * D.U.T + ‚ - Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. D.U. Reverse Recovery Current D.U. Re-Applied Voltage Inductor Curent *** V = 5.0V for Logic Level and 3V Drive Devices GS Fig 17. For N-channel 8 Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane ƒ ...
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... Data and specifications subject to change without notice. Qualification Standards can be found on IR’s Web site. Visit us at www.irf.com for sales contact information. 3/01 IRF1405 - B - 1.32 (.05 2) 1.22 (. ...