IRF2804 International Rectifier, IRF2804 Datasheet

MOSFET N-CH 40V 75A TO-220AB

IRF2804

Manufacturer Part Number
IRF2804
Description
MOSFET N-CH 40V 75A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF2804

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.3 mOhm @ 75A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
240nC @ 10V
Input Capacitance (ciss) @ Vds
6450pF @ 25V
Power - Max
330W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF2804

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Features
l
l
l
l
l
Description
Specifically designed for Automotive applications,
this HEXFET
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient
and reliable device for use in Automotive applica-
tions and a wide variety of other applications.
HEXFET
I
I
I
I
P
V
E
E
I
E
T
T
R
R
R
R
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
D
D
D
DM
AR
J
STG
D
GS
AS
AS
AR
θJC
θCS
θJA
θJA
@ T
@ T
@ T
@T
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
(tested)
C
C
C
C
= 25°C
= 100°C
= 25°C
= 25°C
®
is a registered trademark of International Rectifier.
®
Power MOSFET utilizes the latest
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB Mount, steady state)
c
Parameter
c
Parameter
AUTOMOTIVE MOSFET
GS
GS
GS
h
@ 10V (Silicon Limited)
@ 10V (See Fig. 9)
@ 10V
(Package Limited)
TO-220AB
i
IRF2804
j
G
d
300 (1.6mm from case )
HEXFET
See Fig.12a,12b,15,16
Typ.
0.50
–––
–––
–––
10 lbf•in (1.1N•m)
D
S
-55 to + 175
IRF2804S
D
Max.
1080
1160
± 20
280
200
330
670
2.2
75
2
Pak
®
R
Power MOSFET
DS(on)
Max.
0.45
–––
V
IRF2804S
62
40
IRF2804L
DSS
I
D
IRF2804
= 75A
PD - 94436C
= 2.0mΩ
= 40V
IRF2804L
TO-262
Units
Units
W/°C
°C/W
mJ
mJ
°C
W
A
V
A
1

Related parts for IRF2804

IRF2804 Summary of contents

Page 1

... PD - 94436C IRF2804 IRF2804S IRF2804L ® HEXFET Power MOSFET 40V DSS ‰ 2.0mΩ DS(on 75A Pak TO-262 IRF2804S IRF2804L Max. Units 280 A 200 75 1080 330 W 2.2 W/°C ± 670 mJ 1160 See Fig.12a,12b,15, - 175 °C 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Typ ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R SMD Static Drain-to-Source On-Resistance DS(on) R TO-220 Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 1000 5.5V 5.0V BOTTOM 4.5V 100 10 4.5V 20µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 ...

Page 4

0V MHZ C iss = SHORTED C rss = C gd 10000 C oss = 8000 Ciss 6000 4000 2000 ...

Page 5

LIMITED BY PACKAGE 250 200 150 100 100 Case Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 SINGLE ...

Page 6

D.U 20V GS 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms ...

Page 7

Duty Cycle = Single Pulse 1000 0.01 100 0.05 0. 1.0E-07 1.0E-06 Fig 15. Typical Avalanche Current Vs.Pulsewidth 800 TOP Single Pulse BOTTOM 10% Duty Cycle 75A 600 400 200 ...

Page 8

SD • Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms 8 Driver Gate Drive P.W. D.U.T. ...

Page 9

Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 4 15.24 (.600) 14.84 (.584 14.09 (.555) 13.47 (.530) 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ...

Page 10

Dimensions are shown in millimeters (inches HIS IS AN IRF530S WIT H LOT CODE 8024 ASS EMBLED ON WW 02, 2000 ASS EMBLY LINE "L" 10 INT ERNAT IONAL RECT IFIER F 530S LOGO ...

Page 11

TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information www.irf.com IGBT 1- GATE 2- COLLECTOR 3- EMITTER 11 ...

Page 12

Dimensions are shown in millimeters (inches) TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL 10.90 (.429) 10.70 (.421) FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. ...

Page 13

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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