IRF3709 International Rectifier, IRF3709 Datasheet
IRF3709
Specifications of IRF3709
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IRF3709 Summary of contents
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... PD - 94071 IRF3709 IRF3709S IRF3709L ® HEXFET Power MOSFET R max I DS(on) D † 9.0m 90A 2 D Pak TO-262 IRF3709S IRF3709L Max. Units 30 V ± † 360 120 W 3.1 W 0.96 mW/°C - 150 °C Max. Units 1.04 – ...
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... IRF3709/3709S/3709L Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Dynamic @ T = 25°C (unless otherwise specified) ...
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... Fig 1. Typical Output Characteristics 1000 ° 150 C J 100 V DS 20µs PULSE WIDTH 10 2.0 3.0 4.0 5 Gate-to-Source Voltage (V) GS Fig 3. Typical Transfer Characteristics www.irf.com IRF3709/3709S/3709L 1000 TOP BOTTOM 100 10 ° 100 0.1 Fig 2. Typical Output Characteristics 2 1.5 ° 1.0 0.5 = 15V ...
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... IRF3709/3709S/3709L 4000 1MHz iss rss oss ds gd 3000 C iss 2000 C oss 1000 C rss Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 T = 150 C ° ° 0.1 0.2 0.8 1.4 V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage SHORTED ...
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... Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 0.02 SINGLE PULSE 0.01 (THERMAL RESPONSE) 0.01 0.00001 0.0001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com IRF3709/3709S/3709L Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 125 150 ° 10 d(on) Fig 10b ...
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... IRF3709/3709S/3709L 0 Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 6 1200 15 V 1000 800 + 600 400 200 Starting T , Junction Temperature( C) Fig 12c. Maximum Avalanche Energy 12V V Fig 13b. Gate Charge Test Circuit ...
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... Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent * for Logic Level Devices GS Fig 14. For N-Channel HEXFET www.irf.com IRF3709/3709S/3709L Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane ƒ Low Leakage Inductance Current Transformer - „ dv/dt controlled Driver same type as D ...
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... IRF3709/3709S/3709L TO-220AB Package Outline Dimensions are shown in millimeters (inches (. (. (. (. (. (. (. (. (. (. (. & TO-220AB Part Marking Information (. (. (. (. (. (. (. (. (. .93 (. . & (. (. 0 0 www.irf.com ...
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... X 0 .69 (. .08 (. .25 (. FTER IP & 4.5M , 198 TRO L LIN SIO ATSINK & Pak Part Marking Information TIO www.irf.com IRF3709/3709S/3709L - B - 4.69 (.1 85) 4.20 (.1 65) 1.3 2 (.05 2) 1.2 2 (.04 8) 2.7 9 (.110 ) 2.2 9 (.090 ) 5 .28 (. .78 (.18 8) 1 0.5 5 (.022 ) 1 0.4 6 (.018 ) AIN ...
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... IRF3709/3709S/3709L TO-262 Package Outline TO-262 Part Marking Information 10 www.irf.com ...
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... Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. † Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com IRF3709/3709S/3709L (. (. (. (. ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...